Yanhong Liu

Xihua University — China

Energy · Physical Sciences

20h-index1.7kcitations75works6.02yr avg
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Research Topics

Advanced Photocatalysis Techniques(9), Advanced Memory and Neural Computing(9), Semiconductor materials and devices(8), GaN-based semiconductor devices and materials(7), Quantum Dots Synthesis And Properties(6)

Publications75 total

CD33 <sup>KO</sup> -CD33-mesothelin Loop CAR design avoids fratricide and improves efficacy of iNK cells against acute myeloid leukemia
Journal for ImmunoTherapy of Cancer·2025· 1 citedOpen Access
Asymmetric dual-band perfect absorber induced by hybrid modes of Tamm and localized surface plasmon polaritons
Optical Materials Express·2025· 1 citedOpen Access
Transforming CO Poisoning into a Critical Step for Electrocatalytic C─N Coupling to Urea in a Carbon‐Dot‐Dominated Nanoreactor
Angewandte Chemie International Edition·2025· 8 citedOpen Access
Amphiphilic Carbon Dots for Ultrafast and Wash-Free Mitochondria-Targeted Imaging
ACS Nano·2025· 12 cited
6-in. high-voltage GaN-based E-mode HEMTs with ultrathin barrier structures: Interface quality and its reliability
Applied Physics Letters·2025· 1 cited
A Room-Temperature Dual-Gas Humidity/Ammonia Sensor Based on Gallium Oxide for Breath Analysis
IEEE Sensors Journal·2025· 4 cited
CD33 <sup>KO</sup> -CD33-mesothelin loop CAR design avoids fratricide and improves efficacy of iNK cells against acute myeloid leukemia
2025
Synergistic Enhancement of Ligand &amp; Cluster Connectivity to Construct Highly Stable Fluorescein‐Based MOFs with Thickened Channel Walls for Boosting Photocatalytic Activity
Small·2025· 1 cited
1500 V recessed-free GaN-based HEMTs with ultrathin barrier epitaxial structure
Applied Physics Letters·2024· 3 cited
Thin-Barrier E-Mode GaN-Based MIS-HEMT with High Saturation Current Using AlSiO Composite Gate Dielectric
2024
Carbon Dots-Mediated 0D/2D Interface Engineering in Ni<sub>3</sub>S<sub>2</sub> Nanosheets for Efficient Electrocatalytic Urea Oxidation Coupled with Hydrogen Evolution
ACS Applied Nano Materials·2024
Improved breakdown voltage and dynamic R<sub>on</sub> characteristics in normally-off GaN-based HEMTs featuring fully-recessed and bilayer-dielectric gate structure
Journal of Physics D Applied Physics·2024· 1 cited
Advances in Nanomedicine and Biomaterials for Endometrial Regeneration: A Comprehensive Review
International Journal of Nanomedicine·2024· 12 citedOpen Access
Quintuple Free‐Radical Therapy: An Ultralong‐Retention FAND for NIR‐Involved Multiple Site‐Acting Hypoxic Tumor Therapy
Advanced Functional Materials·2024· 24 citedOpen Access
A facile synthesis of novel binder-free NiSe-SnSe electrode: With enhanced electrochemical performance and superior life span
Journal of Energy Storage·2024· 7 cited
Synaptic properties of GaOx-based memristor with amorphous GaOx deposited by RF magnetic sputtering
Journal of Applied Physics·2024· 15 citedOpen Access
Molecularly Imprinted Macroporous Hydrogel Promotes Bone Regeneration via Osteogenic Induction and Osteoclastic Inhibition
Advanced Healthcare Materials·2024· 10 cited
Performance improvement of enhancement-mode GaN-based HEMT power devices by employing a vertical gate structure and composite interlayers*
Semiconductor Science and Technology·2024· 3 citedOpen Access
Study on Smart Health Management Strategy in Shenzhen from the Perspective of National Fitness
2024Open Access
Rational design of type-I photosensitizer molecules for mitochondrion-targeted photodynamic therapy
Journal of Materials Chemistry B·2024· 18 cited
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Frequent Co-authors

Huolin Huang(9), Baodong Mao(8), Hui Huang(5), Zhenhui Kang(5), Jian Wang(4), Pengyan Wu(4), Xiao‐Qi Yu(4), Jianxun Dai(4), Nan Sun(4), Pengcheng Tao(4), Yang Liu(3), Weidong Shi(3), Ping Gao(3), Zhankun Weng(3), Chuanhui Cheng(3), Zhonghao Sun(3), Yung C. Liang(3), Chunxia Wang(3), Weijing Cao(2), Jinfeng Zhang(2)