J. Barak

Engineering · Physical Sciences

25h-index1.9kcitations112works0.02yr avg
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Research Topics

Radiation Effects in Electronics(39), Integrated Circuits and Semiconductor Failure Analysis(32), Semiconductor materials and devices(27), Magnetic properties of thin films(20), Ion-surface interactions and analysis(19)

Publications112 total

NIEL Calculations for III–V Compound Semiconductors Under Electron or Proton Irradiation
IEEE Transactions on Nuclear Science·2022· 7 cited
A Survey of the Analytical Methods of Proton-NIEL Calculations in Silicon and Germanium
IEEE Transactions on Nuclear Science·2020· 11 cited
Insight into the dynamics of electrons ejected by energetic ions in silicon and its relation to the basics of the inelastic thermal spike model
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·2018· 1 cited
Role of Elastic Scattering of Protons, Muons, and Electrons in Inducing Single-Event Upsets
IEEE Transactions on Nuclear Science·2017· 24 cited
SEU Rate in Avionics: From Sea Level to High Altitudes
IEEE Transactions on Nuclear Science·2015· 12 cited
Single Event Hard Errors in SRAM Under Heavy Ion Irradiation
IEEE Transactions on Nuclear Science·2014· 12 cited
Energy spectra and LET spectra of protons behind shielding
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·2014· 8 cited
Delta-electron spectra, inelastic cross sections, and stopping powers of ions in silicon: Comparison between different models
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·2014· 17 cited
Calculation of Cross Section for Ion-Induced SEU Through Direct Ionization in Nanometric Silicon Devices With Small Critical Energy
IEEE Transactions on Nuclear Science·2013· 9 cited
Anthology of the Development of Radiation Transport Tools as Applied to Single Event Effects
IEEE Transactions on Nuclear Science·2013· 65 cited
SEU due to electrons in silicon devices with nanometric sensitive volumes and small critical charge
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·2012· 23 cited
Can swift heavy ions create latent tracks in silicon?
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·2011· 22 cited
14 MeV Neutrons SEU Cross Sections in Deep Submicron Devices Calculated Using Heavy Ion SEU Cross Sections
IEEE Transactions on Nuclear Science·2011· 18 cited
Impact of time and space evolution of ion tracks in nonvolatile memory cells approaching nanoscale
Journal of Applied Physics·2010· 8 cited
Ion track structure calculations in silicon – Spatial and temporal aspects
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·2010· 34 cited
Monte Carlo calculations of electron transport in silicon and related effects for energies of 0.02–200 keV
Journal of Applied Physics·2009· 43 cited
A Double-Power-MOSFET Circuit for Protection From Single Event Burnout
IEEE Transactions on Nuclear Science·2008· 4 cited
Electron and Ion Tracks in Silicon: Spatial and Temporal Evolution
IEEE Transactions on Nuclear Science·2008· 77 cited
Ion Track Structure and Dynamics in SiO$_{2}$
IEEE Transactions on Nuclear Science·2008· 16 cited
Charge Yield and Track Structure Effects on Total Ionizing Dose Measurements
IEEE Transactions on Nuclear Science·2008· 19 cited
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Frequent Co-authors

A. Akkerman(24), Michael Murat(12), J. Levinson(9), Y. Lifshitz(8), Avner Haran(5), B.E. Fischer(5), M. Victoria(5), D. David(4), E.L. Adler(4), A. Zentner(4), Martin Schlögl(3), W. Hajdas(3), J.T. Suss(3), Dimitris Emfietzoglou(2), S. Duzellier(2), Nati Refaeli(2), M. Shaham(2), U. El-Hanany(2), W. W. Warren(2), M. Hass(2)