Tosja Zywietz

Physics and Astronomy · Physical Sciences

14h-index1.7kcitations25works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(13), Metal and Thin Film Mechanics(7), Semiconductor materials and devices(6), ZnO doping and properties(4), Advanced Chemical Physics Studies(3)

Publications25 total

A system for intelligent home care ECG upload and priorisation
2010· 11 cited
Intelligent Internet Based, High Quality ECG Analysis for Clinical Trials
2007· 1 cited
Adatom Kinetics On and Below the Surface: The Existence of a New Diffusion Channel
Physical Review Letters·2003· 324 cited
SURFACE MORPHOLOGY OF <font>GaN</font> SURFACES DURING MOLECULAR BEAM EPITAXY
Surface Review and Letters·2000· 17 cited
Spontaneous Formation of Indium-Rich Nanostructures on InGaN(0001) Surfaces
Physical Review Letters·2000· 117 citedOpen Access
Surface structures and growth kinetics of InGaN(0001) grown by molecular beam epitaxy
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·2000· 79 citedOpen Access
Theory of surfaces and interfaces of group III-nitrides
Applied Surface Science·2000· 33 cited
Indium induced changes of GaN growth
APS·2000
CCDC 101130: Experimental Crystal Structure Determination
The Cambridge Structural Database·2000Open Access
Tricyclopropylamine and Its Radical Cation
Angewandte Chemie International Edition·1999· 21 cited
Tricyclopropylamin und sein Radikalkation
Angewandte Chemie·1999· 9 cited
The adsorption of oxygen at GaN surfaces
Applied Physics Letters·1999· 257 citedOpen Access
Surfaces and growth of group-III nitrides
Max Planck Institute for Plasma Physics·1999
Tricyclopropylamine and Its Radical Cation
Universitätsbibliographie, Universität Duisburg-Essen·1999
An Experimental Thermochemical and Theoretical Study of Triquinacene:  Definitive Disproof of Its Neutral Homoaromaticity
Journal of the American Chemical Society·1998· 63 cited
Novel Reconstruction mechanisms: A comparison between group-III-nitrides and "traditional" III-V-semiconductors
ArXiv.org·1998· 1 citedOpen Access
Adatom Diffusion at GaN (0001) and (000$\overline{1}$) Surfaces
Applied Physics Letters·1998
Adatom diffusion at GaN (0001) and (0001) surfaces
Applied Physics Letters·1998· 452 citedOpen Access
Aromaticity and Antiaromaticity in Oligocyclic Annelated Five-Membered Ring Systems
The Journal of Organic Chemistry·1998· 122 cited
Clean and As-Covered Zinc-Blende GaN (001) Surfaces: Novel Surface Structures and Surfactant Behavior
Physical Review Letters·1998· 102 citedOpen Access
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Frequent Co-authors

Jörg Neugebauer(13), John E. Northrup(10), Matthias Scheffler(9), Paul von Ragué Schleyer(7), Haijun Jiao(6), Armin de Meijere(5), R. M. Feenstra(4), Rainer Haag(4), Vladimir Chaplinski(4), Harald Winsel(4), Mikhael A. Kusnetsov(4), Thomas Haumann(4), Pascal Merstetter(4), Huajie Chen(3), Helmut Schwarz(3), Paul Rademacher(3), Roland Boese(3), M. Trætteberg(3), Fabian Gerson(3), Armin de Meijere(2)