E. Ligeon

Engineering · Physical Sciences

21h-index1.8kcitations103works0.02yr avg
OpenAlex↗Google Scholar↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Ion-surface interactions and analysis(27), Advanced Semiconductor Detectors and Materials(25), Nuclear Physics and Applications(17), Semiconductor Quantum Structures and Devices(16), Silicon and Solar Cell Technologies(14)

Publications103 total

Infrared spectroscopy in clinical chemistry, using chemometric calibration techniques
2017
Intermixing produced by ion implantation: Case of II–VI semiconductor multilayers
Journal of Applied Physics·1995· 3 cited
In situ characterization of rare earth-CdTe heterostructures by ion beam analysis
Thin Solid Films·1994· 4 cited
Low resistance ohmic contact on <i>n</i>-CdTe
Applied Physics Letters·1994· 4 cited
Implantation-enhanced interdiffusion of CdTe-ZnTe heterostructures
Journal of Applied Physics·1993· 7 citedOpen Access
Evidence of an interfacial layer formation during rare-earth deposition onto CdTe: The case of Sm
Journal of Applied Physics·1993· 13 cited
Raman signal vs. preparation conditions of C-implanted-and-excimer-laser-annealed Cu thin films
Diamond and Related Materials·1993· 2 cited
Epitaxial growth of rare earths and rare-earth compounds on II–VI semiconductors
Applied Surface Science·1993· 3 cited
Implantation-enhanced interdiffusion in CdTe/ZnTe quantum wells
Materials Science and Engineering B·1993· 2 cited
Reactive epitaxy of [001] europium on [001] CdTe
Applied Physics Letters·1992· 6 cited
Annealing effect on the shape of CdTe/ZnTe quantum wells
Applied Physics Letters·1992· 9 cited
Ion Implantation in Multilayers
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena·1992
Ion beam modification of amorphous clusters formed in ion-implanted Ni-P alloys
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·1991· 3 cited
Structural properties of interfaces between II-VI and III-V semiconductors
Physica Scripta·1991· 3 cited
On the temperature dependence of amorphous cluster formation in ion-implanted alloys
Physics Letters A·1990· 6 cited
(111) CdTe molecular beam epitaxy growth on misoriented (001) GaAs substrate
Journal of Crystal Growth·1990· 7 cited
Structural and optical properties of Cd0.7Hg0.3Te-CdTe heterostructures grown by molecular beam epitaxy
Journal of Crystal Growth·1990· 6 cited
Structure of (111) CdTe epilayers on misoriented (001) GaAs
Journal of Applied Physics·1990· 27 cited
RHEED, XPS, HRTEM and channeling studies of molecular beam epitaxy growth of CdTe On (001) GaAs
Applied Surface Science·1990· 42 cited
Detailed analysis of the amorphization process in low-temperature ion-bombarded metallic alloys
Materials Science and Engineering A·1989· 3 cited
page 1 of 6Next →

Frequent Co-authors

J. Fontenille(17), R. Danielou(16), A.C. Chami(12), A. Guivarc’h(7), K. Saminadayar(7), J.P. Bugeat(6), André Bontemps(6), J. Cibért(6), S. Tatarenko(6), G. Feuillet(6), Y. Gobil(4), Le Si Dang(4), J.L. Pautrat(3), J. Richard(3), J.P. Longequeue(3), J. P. Gailliard(2), R. Eymery(2), M. Le Contellec(2), L. Thomé(2), Frédéric Pons(2)