Zhifeng Lei

Hunan University — China

Engineering · Physical Sciences

24h-index4.1kcitations161works4.32yr avg
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Research Topics

Semiconductor materials and devices(51), Radiation Effects in Electronics(47), High Entropy Alloys Studies(30), Integrated Circuits and Semiconductor Failure Analysis(30), High-Temperature Coating Behaviors(22)

Publications161 total

Solvent-enriched interface enables ductility in an ultrastrong alloy
Acta Materialia·2025
Characteristics and mechanisms of single event upset induced by atmospheric neutrons in charge trap 3D NAND flash memory
Acta Physica Sinica·2025Open Access
Evaluation of atmospheric-neutron-induced failure rates in sic power diodes via spallation neutron irradiation
IET conference proceedings.·2025
Softening-resistant eutectics via metal-carbide interplanar matching
Cell Reports Physical Science·2025Open Access
SIRT3 Activation by SGLT2 Inhibitor Mitigates Endothelial-To-Mesenchymal Transition in Dahl Salt-Sensitive Rats Induced by High-Salt Diet
American Journal of Hypertension·2025· 1 cited
A dual-branch automatic classification network for lunar simple crater degradation grades integrating image and morphological parameters
Icarus·2025
AI-empowered rapid energy feedback in early design: Impacts on performance, aesthetics, and knowledge development
Energy and Buildings·2025
Comparison of SEB cross-sections between spallation neutron and mono-energetic proton for SiC MOSFETs
Microelectronics Reliability·2025
Hydrogen Treatment-Induced Interface State Optimization in Ni/Au (001) <i>β</i> -Ga <sub>2</sub> O <sub>3</sub> Schottky Barrier Diode
IEEE Transactions on Electron Devices·2025
[Preoperative short-course radiotherapy followed by chemotherapy and PD-1 inhibitor administration for locally advanced rectal cancer: the initial results of a randomized controlled clinical trial (STELLAR II)].
PubMed·2025
Single-event burnout in <i>β</i>-Ga2O3 Schottky barrier diode induced by heavy ion irradiation
Applied Physics Letters·2025· 1 cited
Influence of 300 MeV High-Energy Proton Irradiation on β-Ga <sub>2</sub> O <sub>3</sub> Solar-Blind Ultraviolet Photodetector
IEEE Transactions on Electron Devices·2025
Atomic-scale insights into the failure origins of polycrystalline thermoelectric materials: CoSb3, Mg2Si, and SnSe
Acta Materialia·2025· 2 cited
Synergistic enhancement of strength and plasticity in SnSe via size-effect-triggered multiple slip activation
Ceramics International·2025· 3 cited
Mechanism of Heavy Ion-Induced Leakage Current Increase in Normally-OFF p-GaN Gate HEMTs
IEEE Transactions on Electron Devices·2025· 1 cited
Study on the Effect of Porous Layer Cracks on PEMFC Performance Based on Lattice Boltzmann Method
2025
Ultrastrong and ductile precipitation-hardened alloy via high antiphase boundary energy
Science Advances·2025· 21 citedOpen Access
Comparison of 14-MeV Neutron-Induced Damage in Si and SiC Power MOSFETs
IEEE Transactions on Electron Devices·2025
Investigation on Gate-Oxide Damage of SiC Power MOSFETs Induced by Heavy Ion
IEEE Transactions on Electron Devices·2025· 1 cited
Comprehensive Study of Proton and Heavy Ion-Induced Damages for Cascode GaN-Based HEMTs
Electronics·2025Open Access
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Frequent Co-authors

Zhaoping Lü(19), Zhangang Zhang(18), Chao Peng(15), Xiongjun Liu(10), Yuan Wu(10), Hui Wang(9), Yunfei En(7), Ziwen Chen(7), Shaozhong Yue(7), Suihe Jiang(6), Xiangli Zhong(6), Jiabin Liu(5), Yujuan He(5), Shaofei Liu(4), Yiming Huang(4), Chao Ma(4), Zhenggang Wu(4), Hongxia Guo(4), Shudao Wang(3), Baptiste Gault(3)