Martin M. Frank

Karlsruhe Institute of Technology — Germany

Engineering · Physical Sciences

42h-index5.4kcitations175works2.02yr avg
OpenAlex↗ORCID↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Semiconductor materials and devices(110), Advancements in Semiconductor Devices and Circuit Design(57), Ferroelectric and Negative Capacitance Devices(38), Integrated Circuits and Semiconductor Failure Analysis(37), Semiconductor materials and interfaces(22)

Publications175 total

Innovative Oxide Transistor Satisfying Performance and Reliability Simultaneously by Understanding of Physics and Materials Properties
arXiv (Cornell University)·2025Open Access
Energy efficiency trends in HPC: what high-energy and astrophysicists need to know
Frontiers in Physics·2025· 2 citedOpen Access
Energy-aware operation of HPC systems in Germany
Frontiers in High Performance Computing·2025· 7 citedOpen Access
Small-signal capacitance in ferroelectric hafnium zirconium oxide: mechanisms and physical insights
Nanoscale·2025· 2 citedOpen Access
Energy-aware operation of HPC systems in Germany
arXiv (Cornell University)·2024Open Access
Wayzgoose Press’ For Adult Emergent Readers Series
ADULT LITERACY EDUCATION THE INTERNATIONAL JOURNAL OF LITERACY LANGUAGE AND NUMERACY·2024Open Access
Small Signal Capacitance in Ferroelectric HZO: Mechanisms and Physical Insights
arXiv (Cornell University)·2024· 1 citedOpen Access
Demonstration of transfer learning using 14 nm technology analog ReRAM array
Frontiers in Electronics·2024· 4 citedOpen Access
Design of Analog-AI Hardware Accelerators for Transformer-based Language Models (Invited)
2023· 7 cited
Architectures and Circuits for Analog-memory-based Hardware Accelerators for Deep Neural Networks (Invited)
2023· 1 cited
Impact of Phase-Change Memory Drift on Energy Efficiency and Accuracy of Analog Compute-in-Memory Deep Learning Inference (Invited)
2023· 5 cited
Deep learning acceleration in 14nm CMOS compatible ReRAM array: device, material and algorithm co-optimization
2022 International Electron Devices Meeting (IEDM)·2022· 22 cited
A Heterogeneous and Programmable Compute-In-Memory Accelerator Architecture for Analog-AI Using Dense 2-D Mesh
IEEE Transactions on Very Large Scale Integration (VLSI) Systems·2022· 65 cited
Filament Localization and Characterization in Hf02 ReRAM Cells using Laser Stimulation
2022
Gibbs spatial process for characterization of filament interaction in ReRAM devices via photon emission microscopy
Applied Physics Letters·2022· 1 cited
Crystallization of hafnium-oxide-based ferroelectrics for BEOL integration
2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)·2022· 5 cited
Development of spatial nearest-neighbor analysis and Clustering/Gibbs statistical methodology for filament percolation in dielectric breakdown and forming process in ReRAM devices
2021 IEEE International Electron Devices Meeting (IEDM)·2021· 2 cited
Photon Emission Microscopy of HfO2 ReRAM Cells
Proceedings - International Symposium for Testing and Failure Analysis·2021
Resistive Random Access Memory Filament Visualization and Characterization Using Photon Emission Microscopy
IEEE Electron Device Letters·2021· 12 cited
Graphisches Inhaltsverzeichnis: Angew. Chem. 11/2021
Angewandte Chemie·2021Open Access
page 1 of 9Next →

Frequent Co-authors

Vijay Narayanan(14), Hans‐Joachim Freund(12), M. Bäumer(9), Yves J. Chabal(8), Jörg Libuda(7), E. Cartier(6), Marcus Bäumer(6), M. Copel(6), Ralf Kühnemuth(6), E. P. Gusev(5), J. Bruley(4), Vamsi Paruchuri(4), A. Sandell(4), P. A. Brühwiler(4), Takashi Ando(4), B.P. Linder(4), D. Lacey(4), G. D. Wilk(3), Eric Garfunkel(3), J. Newbury(3)