Ming Tian

Oil and Gas Center — China

Engineering · Physical Sciences

9h-index448citations35works7.02yr avg
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Research Topics

Semiconductor materials and devices(10), Advancements in Semiconductor Devices and Circuit Design(8), Quantum Dots Synthesis And Properties(6), GaN-based semiconductor devices and materials(5), Chalcogenide Semiconductor Thin Films(5)

Publications35 total

Synthesis and Evaluation of High-Temperature-Resistant and Environmentally Friendly Polymer Filter Loss Additives
Polymers·2025· 4 citedOpen Access
Au–In Alloy for Excellent Ohmic Contact in GeSe Devices with Enhanced Photodetector Properties
ACS Applied Materials & Interfaces·2025· 2 cited
PVD Grown p-type SnSe on the hBN Surface with High Field-Effect Mobility
ACS Applied Electronic Materials·2025· 2 cited
High-Pressure High-Temperature Synthesis of Hexagonal Boron Nitride Single Crystals from a Sr<sub>3</sub>B<sub>2</sub>N<sub>4</sub> Solvent
Crystal Growth & Design·2024· 2 cited
Multiresistance states in ferro- and antiferroelectric trilayer boron nitride
Nature Communications·2024· 25 citedOpen Access
A ternary mechanism for the facilitated transfer of metal ions onto metal—organic frameworks: implications for the “versatility” of these materials as solid sorbents
Frontiers of Chemical Science and Engineering·2022· 4 cited
Carbon-related defect control of bulk hBN single crystals growth by atmospheric-pressure metal-flux-based fusion synthesis
Journal of Materials Science·2022· 9 cited
Thermal Crosstalk Characterization Using Temperature Dependent Leakage Current Through Gate Stacks
IEEE Electron Device Letters·2021· 3 cited
Transverse Electric Lasing at a Record Short Wavelength 244.63 nm from GaN Quantum Wells with Weak Exciton Localization
ACS Photonics·2021· 9 citedOpen Access
Study of laser beam pointing stability measuring system based on F-theta lens
AOPC 2020: Optical Sensing and Imaging Technology·2020
Carrier recombination dynamics in green InGaN-LEDs with quantum-dot-like structures
Journal of Materials Science·2020· 10 cited
Simulation of location and size effects on performance adjustment in hybrid N-type MOSFETs
Materials Science in Semiconductor Processing·2020· 2 cited
A new model on recombination dynamics of polar InGaN/GaN MQW LED and IQE measurement
Semiconductor Science and Technology·2020· 4 cited
Investigation of Carrier Recombination Dynamics of Light-Emitting Diode Based on InGaN Quantum Dots
Guangpuxue yu guangpu fenxi·2020
New Measurement Method for Self-Heating in Silicon-on-Insulator MOSFETs Based on Shared Series Resistance
IEEE Electron Device Letters·2019· 3 cited
Effects of an in-situ SiN <i> <sub>x</sub> </i> interlayer on structural and optical properties for nonpolar <i>a</i> -plane GaN epilayers
Japanese Journal of Applied Physics·2019· 8 cited
Advanced 22 nm FD-SOI devices integration platform
2019· 1 cited
Variation Analysis of Interconnect Capacitance and Process Corner in Advanced CMOS Process with Double Patterning Technology
2019
Performance Investigation of Uniaxially Tensile Stressed Ge n-FinFETs Formed on Biaxially Strained GeOI Substrates And Its Impact On Ge CMOS Inverters
2019
Fabrication, characterizations, and electron transportation from CdS/Cd/Si heterojunctions by the radio frequency magnetron sputtering method
Applied Physics A·2019· 1 cited
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Frequent Co-authors

Yue Li Song(7), Fengqun Zhou(7), Peng Ji(7), Neng Wan(5), Yong Li(5), Zhe Chuan Feng(5), Tao Lin(4), Changfeng Wang(4), Hong Chun Huang(3), Jiehua Cao(3), Wangyong Chen(3), Linlin Cai(3), Yongfeng Cao(3), Duanquan Liao(3), Gang Du(3), Shu Yuan(3), Ran Cheng(3), Yi Zhao(3), Ruowang Chen(3), Hui Shi(3)