Kimihiko Kato

National Institute of Advanced Industrial Science and Technology — Japan

Engineering · Physical Sciences

21h-index1.6kcitations235works0.82yr avg
OpenAlex↗ORCID↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Semiconductor materials and devices(119), Advancements in Semiconductor Devices and Circuit Design(90), Semiconductor materials and interfaces(31), Quantum and electron transport phenomena(26), Semiconductor Quantum Structures and Devices(25)

Publications235 total

A Proposal to Utilize V<sub>PG</sub>-V<sub>BG</sub> Mapping toward Optimizing Gate Voltages in Silicon Fin-Type Quantum Dot Devices
2025
Pauli spin blockade at room temperature in double-quantum-dot tunneling through individual deep dopants in silicon
Communications Physics·2025Open Access
Requirements for localization length and impurity positions in high-temperature quantum dot operations of isoelectronic-trap-assisted tunnel field-effect transistors
Japanese Journal of Applied Physics·2025Open Access
Effect of interface trap charge on Coulomb oscillation in MOS-type quantum dots
Japanese Journal of Applied Physics·2025Open Access
Hot Carrier Degradation in Si n-MOSFETs at Cryogenic Temperatures
IEEE Journal of the Electron Devices Society·2025· 2 citedOpen Access
Origin of Long-Period Electrical Instability in Silicon Fin-Type Quantum Dots
2024
Stabilization of a silicon double quantum dot based on a multi-dimensional gradient descent technique
Applied Physics Express·2024Open Access
Neural-network-based prediction of cryogenic BSIM4 model parameters from small datasets
Japanese Journal of Applied Physics·2024· 1 citedOpen Access
Influence of gate work function variations on characteristics of fin-shaped silicon quantum dot device with multi-gate under existence of gate electrostatic coupling
Solid-State Electronics·2024Open Access
Comprehensive Study on Crystal Growth of CaSi<sub>2</sub> Layers on Si(111) Using Solid Phase Epitaxy
2024
Milli-Kelvin Analysis Revealing the Role of Band-edge States in Cryogenic MOSFETs
2024
Neural Network Prediction of Cryogenic BSIM4 Model Parameters Utilizing a Small Experimental Data Set
2024· 1 cited
Effect of Interface Trap Charge on Coulomb Oscillation in MOS-type Quantum Dots
2024
Asymmetric Hole Spin Resonance Spectrum in Silicon Quantum Dots
2024
Large-Scale Characterization Classifying Double Quantum Dots in Isoelectronic-Trap-Assisted Tunnel Field-Effect Transistors
2024
Neural-network-based transfer learning for predicting cryo-CMOS characteristics from small datasets
Applied Physics Express·2024· 2 citedOpen Access
Occurrence and Mitigation of Hot Carrier Degradation in Cryogenic MOSFET Operation
2024
High-pressure hydrogen annealing improving the cryogenic operation of Si (110)-oriented n-MOSFETs
Japanese Journal of Applied Physics·2024· 1 citedOpen Access
Integration of buried nanomagnet and silicon spin qubits in a one-dimensional fin structure
Japanese Journal of Applied Physics·2024Open Access
Temperature Dependent Variations of Low-Frequency Noise Sources in Cryogenic Short-Channel Bulk MOSFETs
IEEE Access·2024· 9 citedOpen Access
page 1 of 12Next →

Frequent Co-authors

Shinichi Takagi(11), Mitsuru Takenaka(10), Mitsuo Sakashita(10), Shigeaki Zaima(10), Osamu Nakatsuka(9), Hiroyuki Iyozumi(8), Wakana Takeuchi(7), Noriyuki Taoka(7), Chizuko Kageyama(6), Shigehisa Shibayama(6), Hidehiro Inagaki(6), Hiroaki Matsui(5), Hitoshi Tabata(5), Kentaro Hanada(4), Takahiro Mori(4), Hideki Nukui(4), Takahiro Makino(3), Mitsuru Okuda(3), Takanori Asano(3), Hiroshi Oka(3)