Longyang Yu

Xidian University — China

Engineering · Physical Sciences

11h-index352citations58works2.22yr avg
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Research Topics

Silicon Carbide Semiconductor Technologies(36), Advanced DC-DC Converters(27), Multilevel Inverters and Converters(17), GaN-based semiconductor devices and materials(14), Wireless Power Transfer Systems(9)

Publications58 total

Design and Optimization of Fractional-Turn Transformer With Low Core Loss and Profile
IEEE Transactions on Industrial Electronics·2026
Fast and Accurate Calorimetric Switching Loss Measurement for Top-side cooled GaN
2025
An Embedded Decoupling Capacitors Layout of GaN-Based DC-DC Converters with Ultra-Low Power Loop Parasitic Inductance
2025
A Hybrid 3-D Package for GaN Power Module with Integrated Gate Driver and Phase-Change Heat Spreaders
2025
Design and Optimization of 3D Integrated Point-of-Load Converter with PCB-Embedded Inductor
2025
Design and Optimization of Fractional-Turn Transformer with Low Core Loss and Profile
2025
Single-event burnout mechanism in <b>β</b> -Ga2O3 Schottky barrier diodes
Applied Physics Letters·2025
Analysis of the single-event effects in <i>β</i>-Ga2O3 Schottky barrier diodes
Applied Physics Letters·2025· 5 cited
Symmetrical GaN-Based Vertical Module With Low Interference Integration and High Thermal Performance for PoL Converters
IEEE Transactions on Industrial Electronics·2025
A Two-Phase Resonant Switched-Capacitor Converters Using PCB Trace Integration
IEEE Journal of Emerging and Selected Topics in Power Electronics·2025
Middle Meningeal Artery Embolization in the Treatment of Chronic Subdural Hematoma: A Systematic Review and Meta-Analysis
Cerebrovascular Diseases·2025· 4 citedOpen Access
710 GHz GaN gradient doped Schottky barrier diode with high breakdown voltage
Applied Physics Letters·2025· 1 cited
Investigation of a Gate-Series-Diode Structure for Improving Schottky-Type P-Gan Gate Reliability
SSRN Electronic Journal·2025Open Access
Impact of negative gate stress on the reliability of p-GaN gate HEMT devices under dynamic switching operation
Physica Scripta·2024· 1 cited
Improved gate reliability of normally off p-GaN gate HEMTs with <i>in situ</i> SiN cap-layer
Applied Physics Letters·2024· 4 cited
High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate
Micromachines·2024· 3 citedOpen Access
A 3-D GaN-Based PoL Converters Based on the Planar Magnetic Component With Distributed Air Gap and High Thermal Conductivity
IEEE Journal of Emerging and Selected Topics in Power Electronics·2024· 2 cited
TCAD Simulation of the Effect of Buffer Layer Parameters on Single Event Burn-Out in p-GaN Gate HEMTs
IEEE Transactions on Electron Devices·2024· 17 cited
Monolithic fully-controlled HEMT bidirectional power switch with merged Schottky barrier diodes and p-GaN gate transistors for ultra-low turn-on voltage and high threshold voltage
Japanese Journal of Applied Physics·2024· 5 citedOpen Access
A Coupled-Inductor-Based Input-Parallel Output-Parallel Quasi-Resonant Single-Stage DC–DC Converter to Mitigate Current Difference
IEEE Transactions on Industrial Electronics·2023· 3 cited
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Frequent Co-authors

Laili Wang(31), Chengzi Yang(21), Shenglei Zhao(11), Mengyu Zhu(9), Xiufeng Song(9), Min Wu(8), Wei Mu(7), Jincheng Zhang(7), Huaqing Li(7), Yunqing Pei(6), Yongbin Jiang(6), Yue Hao(6), Yongmei Gan(5), Shuzhen You(5), Ga Zhang(4), Xuejing Sun(4), Yue Hao(4), Fan Zhang(3), Yunfei Xu(3), Fei Li(3)