Jianlu Wang

Fudan University — China

Materials Science · Physical Sciences

45h-index8.2kcitations147works4.42yr avg
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Research Topics

2D Materials and Applications(75), Perovskite Materials and Applications(37), Ferroelectric and Negative Capacitance Devices(29), MXene and MAX Phase Materials(21), Advanced Memory and Neural Computing(20)

Publications147 total

Nano‐Scale Phonon Dynamics in GaN: Fundamentals and Strategies for Thermal Transport Modulation
Advanced Electronic Materials·2025· 1 citedOpen Access
Tunable Structural Colors with ‘Light‐Lossy’ MXene Paints
Advanced Materials·2025· 1 cited
Formation mechanisms and suppression method of needle-like defects in HgCdTe epitaxial films
Applied Physics Letters·2025· 1 cited
Bilateral Geiger mode avalanche in InSe Schottky photodiodes
Nature Communications·2025· 3 citedOpen Access
Ionotronics pioneer next-generation information electronics
Device·2025· 2 cited
Barrier‐Type Room‐Temperature Infrared Detector Based on 2D/3D van der Waals Heterostructures
Laser & Photonics Review·2025
Highly sensitive deep ultraviolet to visible photodetector based on backgate regulated selenophosphate In2P3Se9 material
Applied Physics Letters·2025· 2 cited
All‐Optically Modulated In‐Sensor Computing Device Based on Ionic‐Conducting CuInP<sub>2</sub>Se<sub>6</sub>
Advanced Materials·2025· 9 cited
High Precision Conductance Modulation in CuCrP<sub>2</sub>S<sub>6</sub> Synaptic Devices for Enhanced Neuromorphic Computing
Advanced Functional Materials·2025· 5 citedOpen Access
Negative capacitance tunneling field-effect transistor for logic electronics and photodetection devices
Applied Materials Today·2025· 3 cited
Ultra-low dark current photodetector based on two-dimensional CuCrP2S6 material
Applied Physics Letters·2025· 5 cited
High-sensitivity GaN UV photodetector integrated with graphene
Applied Physics Letters·2025· 6 cited
Reconfigurable logic circuits and rectifier based on two-terminal ionic homojunctions
Device·2025· 11 citedOpen Access
Highly sensitive and spectrally tunable UV photodetectors <i>via</i> interface barrier engineering in floating-gate transistors
Nanoscale·2025· 1 cited
Carrier Recirculation Induced Ultrasensitive Photodetectors of InSe/CdTe Heterostructure Featuring an Interfacial Holes Layer
Small·2024· 5 cited
Bilateral Geiger mode avalanche in InSe Schottky photodiodes
2024Open Access
Interfaces in two-dimensional transistors: Key to pushing performance and integration
Materials Science and Engineering R Reports·2024· 7 cited
High responsivity and detectivity β-Ga2O3 solar-blind photodetectors optimized by oxygen vacancy engineering
Materials Today Electronics·2024· 6 citedOpen Access
Multi-dimensional optical information acquisition based on a misaligned unipolar barrier photodetector
Nature Communications·2024· 29 citedOpen Access
Wafer-scale Te thin film with high hole mobility and piezoelectric coefficients
Applied Physics Letters·2024· 3 cited
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Frequent Co-authors

Weida Hu(37), Xudong Wang(22), Xiangjian Meng(22), Junhao Chu(21), Hong Shen(19), Tie Lin(19), Yan Chen(13), Peng Zhou(12), Peng Wang(11), Guangjian Wu(11), Xiaohong Chen(10), Lei Liao(9), Zhen Wang(9), Wei Lü(8), Hai Huang(7), Jinglan Sun(7), Shuaiqin Wu(7), Shuo Sun(6), Yang Wang(6), Fang Wang(6)