Zhigang Jia

Shenyang Pharmaceutical University — China

Physics and Astronomy · Physical Sciences

15h-index812citations105works0.52yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(37), GaN-based semiconductor devices and materials(32), ZnO doping and properties(16), Advanced Semiconductor Detectors and Materials(16), Force Microscopy Techniques and Applications(14)

Publications105 total

Reduction of thermal generation for the dual-junction cascade 940 nm VCSEL by adopting tunnel junction
Journal of Optics·2025
Study on the electrochemical behavior and fluoride film formation of high-purity 70/30 copper–zinc alloy in NaF solution
Electrochimica Acta·2025
A buried tunnel junction 940 nm VCSEL for achieving thermal diffusion characteristics
AIP Advances·2025Open Access
Self-correcting linear chirplet transform for the separation of signals with crossover frequencies
Measurement·2025
In-situ deposition of silver particles onto melamine sponge with PVA assistance and its effective catalytic reduction for organic pollutants
Materials Letters·2025· 1 cited
Quantum-Well-Embedded InGaN Quantum Dot Vertical-Cavity Surface-Emitting Laser and Its Photoelectric Performance
Photonics·2025· 1 citedOpen Access
Study on the Electrochemical Behavior and Fluoride Film Formation of High-Purity 70/30 Copper–Zinc Alloy in Naf Solution
SSRN Electronic Journal·2025Open Access
Self-Correcting Linear Chirplet Transform for the Separation of Signals with Crossover Frequencies
SSRN Electronic Journal·2025Open Access
Effect of microstructural inheritance window on the mechanical properties of an intercritically annealed Q&P steel
Journal of Materials Research and Technology·2024· 2 citedOpen Access
Multi-color emission based on InGaN/GaN micro-truncated pyramid arrays
AIP Advances·2024· 1 citedOpen Access
Effect of Asymmetric InAlGaN/GaN Superlattice Barrier Structure on the Optoelectronic Performance of GaN-Based Green Laser Diode
ECS Journal of Solid State Science and Technology·2024· 1 cited
InP/InGaAs/AlGaAs quantum-well semiconductor laser with an InP based 1550 nm n-GaAsSb single waveguide structure
AIP Advances·2023· 7 citedOpen Access
Reduction of nonradiative recombination for high-power 808 nm laser diode adopting InGaAsP/InGaAsP/GaAsP active region
Optics Communications·2023· 4 cited
Simulation and theoretical study of AlGaN-based deep-ultraviolet light-emitting diodes with a stepped electron barrier layer
AIP Advances·2022· 7 citedOpen Access
Solvent-mediated surface ligand exchange to enhance the performance of quantum-dot light-emitting diodes
Organic Electronics·2022· 8 cited
Numerical study on photoelectric properties of semi-polar 1011 green InGaN light-emitting diodes with quaternary AlInGaN quantum barriers
AIP Advances·2022· 3 citedOpen Access
A Scanning Electrostatic Force Microscope for the Measurement of Material Distribution in Non-contact Condition
2022
Influence of potential well thickness on the carrier transport characteristics of InGaAs quantum dot laser diodes
Physical Chemistry Chemical Physics·2022· 4 cited
Flash carbonization route to magnetic carbon fiber sheet derived from cellulose paper for the bidirectional removal of dye pollutant from wastewater
Desalination and Water Treatment·2021Open Access
Revealing the Effect of Microstructural Inheritance in 1.5 GPa Hot-Rolled Ultrahigh Strength Q&P Steels
Metallurgical and Materials Transactions A·2021· 11 cited
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Frequent Co-authors

Bingshe Xu(25), Hailiang Dong(19), Wei Jia(11), Taiping Lü(10), Shufang Ma(10), Guangmei Zhai(8), Qi Wang(7), Xiaomin Ren(7), Yongqing Huang(7), Jian Liang(7), Tianbao Li(6), Lin Shang(6), Xuguang Liu(6), Yuki Shimizu(5), So Ito(5), Wei Gao(5), Xuguang Liu(5), Yadan Zhu(5), Xiaorun Zhou(5), Guangzhou Zhao(5)