Stephan Wirths

Hitachi (Japan) — Japan

Engineering · Physical Sciences

24h-index3.6kcitations124works1.02yr avg
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Research Topics

Photonic and Optical Devices(55), Semiconductor materials and devices(52), Advancements in Semiconductor Devices and Circuit Design(41), Nanowire Synthesis and Applications(30), Silicon Carbide Semiconductor Technologies(27)

Publications124 total

Impact of Processing Conditions on Bond Reliability in Pressureless Silver Sintering
2025
Evaluation of Switching Performances and Short Circuit Capability of a 1.2 kV SiC GAA MOSFET through TCAD Simulations
Key engineering materials·2025Open Access
Dynamic Bias-Temperature Instability Testing in SiC MOSFETs
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena·2024· 1 citedOpen Access
SiC GAA MOSFET Concept for High Power Electronics Performance Evaluation through Advanced TCAD Simulations
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena·2024· 3 citedOpen Access
Gate Impedance Analysis of SiC power MOSFETs with SiO<sub>2</sub> and High-k Dielectric
2023· 7 cited
Enhanced Device Performance with Vertical SiC Gate-All-Around Nanowire Power MOSFETs
Key engineering materials·2023· 3 citedOpen Access
Majority and Minority Carrier Traps in Manganese as‐Implanted and Postimplantation‐Annealed 4H‐SiC
physica status solidi (b)·2022
Latest Advances in the Implementation and Characterization of High-K Gate Dielectrics in SiC Power MOSFETs
Materials science forum·2022· 3 citedOpen Access
Ohmic Contact Formation on 4H-SiC with a Low Thermal Budget by Means of Shallow Phosphorous Ion Implantation
Materials science forum·2022Open Access
Clamped and Unclamped Inductive Switching of 3.3 kV 4H-SiC MOSFETs with 3D Cellular Layouts
Materials science forum·2022· 3 citedOpen Access
On the Short Circuit Electro-Thermal Failure of 1.2 kV 4H-SiC MOSFETs with 3D Cell Layouts
Materials science forum·2022· 2 citedOpen Access
Optimisation of the carrier lifetime profile in 1.2kV planar and trench SiC MOSFETs
2022· 1 cited
Gate Stress Study on SiN-Based SiC Power MOSFETs
2022· 4 cited
Study of 1.2kV High-k SiC Power MOSFETS Under Harsh Repetitive Switching Conditions
2021· 9 cited
Rugged Dynamic Behaviour of 3.3kV SiC Power MOSFETs with High–k Gate Dielectric
2021· 3 cited
Surge current capability evaluation of 6.5kV SiC MOSFETs with 3D cell layouts
2021· 1 cited
Temperature Dependent Transient Threshold Voltage Hysteresis in SiC Power MOSFETs and Implications for Short Circuit Events
2021· 5 cited
Surge current capability of 6.5kV-rated SiC MOSFETs
2020· 5 cited
Vertical Power SiC MOSFETs with High-k Gate Dielectrics and Superior Threshold Voltage Stability
2020· 12 cited
6.5kV Silicon Carbide MOSFETs with 5kV RB safe operating area and MOS-channel surge capability
2020
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Frequent Co-authors

Dan Buca(29), S. Mantl(25), Gregor Mußler(18), Detlev Grützmacher(18), T. Stoïca(13), Jean‐Michel Hartmann(13), Z. Ikonić(12), Nils von den Driesch(11), A. T. Tiedemann(11), Heinz Schmid(11), Heike Riel(9), U. Breuer(9), Lars Knoll(9), B. Holländer(8), Daniela Stange(7), Kirsten E. Moselund(7), Nicolas Bologna(7), Andrei Mihăilă(6), Johannes Gooth(5), P. Bernardy(5)