Min‐Cheng Chen

Powerchip (Taiwan) — Taiwan

Engineering · Physical Sciences

17h-index1.1kcitations58works0.02yr avg
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Research Topics

Semiconductor materials and devices(32), Advancements in Semiconductor Devices and Circuit Design(22), Ferroelectric and Negative Capacitance Devices(20), Nanowire Synthesis and Applications(12), Advanced Memory and Neural Computing(11)

Publications58 total

Two-Dimensionally Arranged Display Drivers Achieved by OS/Si Structure
2023· 1 cited
P‐151: <i>Late‐News Poster:</i> 1.5‐inch, 3207‐ppi Foveated Display with OLED/OS/Si Structure Capable of 32‐Division Control of Resolution and Frame Rate
SID Symposium Digest of Technical Papers·2023· 3 citedOpen Access
Reduced Switching Current with a Light Metal in a Tri-layer Spin-orbit Torque Device
2023
1.5-inch, 3207-ppi OLED Display Enabled by Monolithic Integration of OSFETs and Si CMOS
Proceedings of the International Display Workshops·2022
3D monolithic CAAC-IGZO/Si hybrid CMOS ring oscillator and 64 multiple states high efficient (&gt;200TOPS/W) for Analog Memory Computing
2022
32‐1: Oxide Semiconductor Field‐Effect Transistor for High‐Resolution Displays Capable of Deep Black Display
SID Symposium Digest of Technical Papers·2022· 7 cited
10‐1: Layout of 1.50‐inch, 3207‐ppi OLED Display with OSLSI/SiLSI Structure Capable of Division Driving Fabricated through VLSI Process with Side‐by‐Side Patterning by Photolithography
SID Symposium Digest of Technical Papers·2022· 14 cited
32‐3: 1.5‐inch, 3207‐ppi Side‐by‐Side OLED Display Capable of 32‐Division Driving with OSLSI/SiLSI Structure Fabricated by Photolithography
SID Symposium Digest of Technical Papers·2022· 9 cited
Erratum: “Fabrication of High-Sensitivity Polycrystalline Silicon Nanowire Field-Effect Transistor pH Sensor Using Conventional Complementary Metal–Oxide–Semiconductor Technology”
Japanese Journal of Applied Physics·2018
Suppression of short channel effects in FinFETs using crystalline ZrO<sub>2</sub> high-<i>K</i>/Al<sub>2</sub>O<sub>3</sub> buffer layer gate stack for low power device applications
Semiconductor Science and Technology·2018· 8 cited
Stressor design for FinFETs with air-gap spacers
2017
Cover Picture: Investigation of strain-induced phase transformation in ferroelectric transistor using metal-nitride gate electrode (Phys. Status Solidi RRL 3/2017)
physica status solidi (RRL) - Rapid Research Letters·2017· 1 citedOpen Access
Bulk FinFET With Low- $\kappa $ Spacers for Continued Scaling
IEEE Transactions on Electron Devices·2017· 53 cited
続スケーリングのための低κスペーサを有するバルクFinFET【Powered by NICT】
IEEE Transactions on Electron Devices·2017
高性能と低エネルギー回路のための被覆エアギャップスペーサをFinFET【Powered by NICT】
IEEE Electron Device Letters·2017
A numerical study of Si-TMD contact with n/p type operation and interface barrier reduction for sub-5 nm monolayer MoS<sub>2</sub> FET
2016· 4 cited
Hyperdimensional computing with 3D VRRAM in-memory kernels: Device-architecture co-design for energy-efficient, error-resilient language recognition
2016· 132 cited
FinFET With Encased Air-Gap Spacers for High-Performance and Low-Energy Circuits
IEEE Electron Device Letters·2016· 48 cited
A Hybrid Implant Doping Technique with Plasma Immersion Ion Implant (PIII) Process for 10 nm Fin Cannel of 3D-FET
2016
Ge GAA FETs and TMD FinFETs for the Applications Beyond Si—A Review
IEEE Journal of the Electron Devices Society·2016· 28 citedOpen Access
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Frequent Co-authors

Fu-Liang Yang(18), Chenming Hu(15), Chang-Hsien Lin(13), Kai‐Shin Li(11), Yun-Fang Hou(10), Jia‐Min Shieh(10), Tahui Wang(10), Yi‐Ju Chen(9), ChiaHua Ho(9), Chun‐Chi Chen(8), Wen‐Kuan Yeh(8), Chia‐Yi Lin(8), Ming-Han Liao(7), Yao‐Jen Lee(7), Angada B. Sachid(6), Cheng-San Wu(6), Shunpei Yamazaki(6), Wen‐Cheng Chiu(5), Cho-Lun Hsu(5), Tung‐Yen Lai(5)