M. A. Revenko

Russian Academy of Sciences — Russia

Physics and Astronomy · Physical Sciences

9h-index216citations26works0.02yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Semiconductor Quantum Structures and Devices(16), Semiconductor materials and interfaces(12), Semiconductor materials and devices(9), Silicon Nanostructures and Photoluminescence(8), Silicon and Solar Cell Technologies(5)

Publications26 total

Dominating nucleation of misfit dislocations from the surface in GeSi/Si(001) films with a stepwise composition grown by means of molecular-beam epitaxy
Journal of Crystal Growth·2006· 9 cited
Origination of misfit dislocations at the surface during the growth of GeSi/Si(001) films by low-temperature (300–400°C) molecular-beam epitaxy
Semiconductors·2006· 5 cited
Heterostructures GexSi1−x/Si(001) grown by low-temperature (300–400°C) molecular beam epitaxy: Misfit dislocation propagation
Journal of Crystal Growth·2005· 11 cited
Direct observations of dislocation half-loops inserted from the surface of the GeSi heteroepitaxial film
Applied Physics Letters·2004· 21 cited
Strain relaxation of GeSi/Si(001) heterostructures grown by low-temperature molecular-beam epitaxy
Journal of Applied Physics·2004· 19 cited
Heterostructures GexSi1−x/Si(001) (x=0.18–0.62) grown by molecular beam epitaxy at a low (350 °C) temperature: specific features of plastic relaxation
Thin Solid Films·2004· 19 cited
Enhanced strain relaxation in a two-step process of GexSi1−x/Si(001) heterostructures grown by low-temperature molecular-beam epitaxy
Applied Physics Letters·2004· 10 cited
Optimization of the plastic relaxation of misfit stresses in GexSi1−x /Si(001) (x≤0.61) heterostructures
Technical Physics Letters·2004· 2 cited
X-ray interference topography investigation of Si/Ge<sub><i>x</i></sub>Si<sub>1 <i>x</i></sub>/Si(001) heterosystem
Journal of Physics D Applied Physics·2003· 29 cited
InP decomposition phosphorus beam source for MBE: design, properties and superlattice growth
Semiconductor Science and Technology·2003· 9 cited
InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source
Journal of Crystal Growth·2002· 12 cited
Plastic relaxation of solid GeSi solutions grown by molecular-beam epitaxy on the low temperature Si(100) buffer layer
Journal of Applied Physics·2002· 19 cited
New superlattices for spin-polarized electron sources
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2002
Growth and Structure of Si Epilayers on Porous Si
2002
InGaAsP Solid Solutions: Phase Diagrams, Growth from the Melt on GaAs Substrates, Elastically Strained Epitaxial Layers
2002
Solid solutions GeSi grown by MBE on a low temperature Si (001) buffer layer: specific features of plastic relaxation
Thin Solid Films·2001· 19 cited
Diffraction method for structure investigations of semiconductor heterosystems using synchrotron variable wavelength
Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment·2000
Effect of Ga predeposition layer on the growth of GaAs on vicinal Ge(001)
Journal of Crystal Growth·1999· 6 cited
Influence of the step height of the vicinal surface of germanium on the formation of antiphase boundaries in a gallium-arsenide-germanium-gallium-arsenide(001) system
Technical Physics Letters·1998
Influence of Al adsorption on In and Ga thermal desorption from InP and GaAs surfaces heated under As4 flux
Thin Solid Films·1997
page 1 of 2Next →

Frequent Co-authors

Yu. B. Bolkhovityanov(18), А. К. Гутаковский(13), Л. В. Соколов(11), A. S. Deryabin(8), Е. М. Труханов(7), O. P. Pchelyakov(6), Alexey Fedorov(5), A. S. Jaroshevich(5), A. V. Katkov(3), N.V. Nomerotsky(3), А. П. Василенко(2), А. В. Колесников(2), V. I. Mashanov(2), М. А. Putyato(2), В. В. Преображенский(2), B. R. Semyagin(2), A. M. Gilinsky(2), D. F. Feklin(2), A.K. Gutakovsky(2), Mikhail Katkov(2)