J. Furthmüller

Friedrich Schiller University Jena — Germany

Engineering · Physical Sciences

60h-index204.4kcitations214works0.32yr avg
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Research Topics

Semiconductor materials and devices(55), GaN-based semiconductor devices and materials(51), Ga2O3 and related materials(36), Silicon Nanostructures and Photoluminescence(34), Semiconductor materials and interfaces(34)

Publications214 total

Hexagonal <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:msub> <mml:mrow> <mml:mi>Ge</mml:mi> <mml:mo>/</mml:mo> <mml:mi>Si</mml:mi> </mml:mrow> <mml:mrow> <mml:mn>0.25</mml:mn> </mml:mrow> </mml:msub> <mml:msub> <mml:mi>Ge</mml:mi> <mml:mrow> <mml:mn>0.75</mml:mn> </mml:mrow> </mml:msub> </mml:mrow> </mml:math> quantum wells: Prediction of quantization and light-emission strength
Physical review. B./Physical review. B·2025Open Access
Influence of spin-orbit interaction and self-consistency on quasiparticle electronic structure and exciton optical spectra beyond Tamm-Dancoff: The case of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msub> <mml:mi>BaF</mml:mi> <mml:mn>2</mml:mn> </mml:msub> </mml:math> and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msub> <mml:mi>SrF</mml:mi> <mml:mn>2</mml:mn> </mml:msub> </mml:math>
Physical review. B./Physical review. B·2025· 1 cited
Surface properties of hexagonal Si and Ge: First-principles study of energetics, atomic relaxation, and electronic structure
Physical review. B./Physical review. B·2025Open Access
First-principles insight in structure-property relationships of hexagonal Si and Ge polytypes
Physical Review Materials·2023· 11 cited
First-principles insight in structure-property relationships of hexagonal Si and Ge polytypes
arXiv (Cornell University)·2023Open Access
Electronic and Optical Properties of Alkaline Earth Metal Fluoride Crystals with the Inclusion of Many-Body Effects: A Comparative Study on Rutile MgF2 and Cubic SrF2
Symmetry·2023· 9 citedOpen Access
From pseudo-direct hexagonal germanium to direct silicon-germanium alloys
Physical Review Materials·2021· 3 citedOpen Access
From pseudo-direct hexagonal germanium to direct silicon-germanium\n alloys
arXiv (Cornell University)·2021Open Access
Efficient strain-induced light emission in lonsdaleite germanium
Physical Review Materials·2021· 28 citedOpen Access
Efficient Light Emission from Hexagonal SiGe
TU/e Research Portal·2021
Influence of Polymorphism on the Electronic Structure of Ga<sub>2</sub>O<sub>3</sub>
Chemistry of Materials·2020· 63 citedOpen Access
Electronic and Optical Properties of Small Metal Fluoride Clusters
ACS Omega·2020· 11 citedOpen Access
Direct-bandgap emission from hexagonal Ge and SiGe alloys
Nature·2020· 360 citedOpen Access
Towards a photonic band edge laser using hexagonal-SiGe nanowire arrays (Conference Presentation)
2020· 1 cited
Transition Matrix Element and Recombination Mechanism of Hexagonal SiGe.
Conference on Lasers and Electro-Optics·2020
Towards a Hexagonal SiGe Semiconductor Laser.
Conference on Lasers and Electro-Optics·2020
Quantization of spin Hall conductivity in two-dimensional topological insulators versus symmetry and spin-orbit interaction
Physical review. B./Physical review. B·2019· 46 citedOpen Access
Influence of screening dynamics on excitons in Ga2O3 polymorphs
Applied Physics Letters·2019· 35 cited
Accurate electronic and optical properties of hexagonal germanium for optoelectronic applications
Physical Review Materials·2019· 72 citedOpen Access
Spontaneous symmetry breaking and electronic and dielectric properties in commensurate <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>La</mml:mi><mml:mrow><mml:mn>7</mml:mn><mml:mo>/</mml:mo><mml:mn>4</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mi>Sr</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>/</mml:mo><mml:mn>4</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mi>CuO</mml:mi><mml:mn>4</mml:mn></mml:msub></mml:mrow></mml:math> and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>La</mml:mi><mml:mrow><mml:mn>5</mml:mn><mml:mo>/</mml:mo><mml:mn>3</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mi>Sr</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>/</mml:mo><mml:mn>3</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mi>NiO</mml:mi><mml:mn>4</mml:mn></mml:msub></mml:mrow></mml:math>
Physical review. B./Physical review. B·2018· 6 cited
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Frequent Co-authors

F. Bechstedt(37), Georg Kresse(13), F. Fuchs(12), Claudia Rödl(9), J. Häfner(5), André Schleife(5), L. K. Teles(5), P. Käckell(5), L. M. R. Scolfaro(4), J. Hafner(3), T. D. Veal(3), C. F. McConville(3), W. J. Schaff(3), A. A. Stekolnikov(2), Jens Renè Suckert(2), Silvana Botti(2), Louis F. J. Piper(2), Hai Lu(2), J. R. Leite(2), Ulrike Großner(2)