Tae‐Sik Yoon

Ulsan National Institute of Science and Technology — South Korea

Engineering · Physical Sciences

27h-index2.9kcitations218works5.72yr avg
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Research Topics

Advanced Memory and Neural Computing(103), Semiconductor materials and devices(48), Neuroscience and Neural Engineering(39), Ferroelectric and Negative Capacitance Devices(36), Thin-Film Transistor Technologies(23)

Publications218 total

Enhanced Nonvolatile Electrochemical Random-Access Memory and Artificial Synapse Characteristics through Oxygen Ion-Exchange Engineering in an Atomic-Layer-Deposited HfO<sub>2–<i>x</i></sub> Gate Insulator and a Zinc Oxide Channel Layer
ACS Applied Materials & Interfaces·2025· 3 cited
VO<sub>x</sub>‐Based Non‐Volatile Radio‐Frequency Switches for Reconfigurable Filter
Advanced Science·2025Open Access
Influence of Heat Treatment Temperature on the Structure and Mechanical Properties of Modified MA6000 Alloy Fabricated by Spark Plasma Sintering
Journal of the Japan Society of Powder and Powder Metallurgy·2025Open Access
Artificial Synaptic Properties in Oxygen-Based Electrochemical Random-Access Memory with CeO<sub>2</sub> Nanoparticle Assembly as Gate Insulator for Neuromorphic Computing
ACS Applied Materials & Interfaces·2025· 6 cited
Electron and Hole Trapping Characteristics of a Low-Temperature Atomic Layer-Deposited HfO<sub>2</sub> Charge-Trap Layer for Charge-Trap Flash Memory
ACS Applied Electronic Materials·2025· 4 cited
Reservoir computing determined by nonlinear weight dynamics in Gd-doped CeO<sub>2</sub>/CeO<sub>2</sub> bi-layered oxide memristors
Journal of Materials Chemistry C·2025· 3 citedOpen Access
Self‐Selective Crossbar Synapse Array with n‐ZnO/p‐NiO<sub>x</sub>/n‐ZnO Structure for Neuromorphic Computing
Advanced Electronic Materials·2024· 4 citedOpen Access
Forming-Free, Low-Voltage, and High-Speed Resistive Switching in Ag/Oxygen-Deficient Vanadium Oxide(VO<sub><i>x</i></sub>)/Pt Device through Two-Step Resistance Change by Ag Filament Formation
ACS Applied Materials & Interfaces·2024· 21 cited
Enhanced linear and symmetric synaptic weight update characteristics in a Pt/p-LiCoO<sub><i>x</i></sub>/p-NiO/Pt memristor through interface energy barrier modulation by Li ion redistribution
Nanoscale·2024· 10 citedOpen Access
Nanoscale Vertical Resolution in Optical Printing of Inorganic Nanoparticles
ACS Nano·2023· 7 cited
Editorial: Materials and processing of emerging non-volatile memory for advanced applications
Materials Science in Semiconductor Processing·2023
Tunable voltage polarity-dependent resistive switching characteristics by interface energy barrier modulation in ceria-based bilayer memristors for neuromorphic computing
Journal of Alloys and Compounds·2023· 14 cited
Linear and symmetric synaptic weight update characteristics by controlling filament geometry in oxide/suboxide HfOx bilayer memristive device for neuromorphic computing
Scientific Reports·2023· 33 citedOpen Access
Write-Once-Read-Many-Times Memory Characteristics with a Large Memory Window Operating at a Low Voltage by Li-Ion Incorporation from the LiCoO<sub><i>x</i></sub> Ion-Supplying Layer into the InGaZnO Channel of a Thin-Film Transistor
ACS Applied Electronic Materials·2023
Tunable Multilevel Gate Oxide Capacitance and Flat‐Band Voltage Shift Characteristics by Filament Formation in Double‐Floating‐Gate Metal–Oxide–Semiconductor Capacitors (Adv. Electron. Mater. 4/2023)
Advanced Electronic Materials·2023Open Access
Non-volatile charge-trap memory characteristics with low-temperature atomic layer deposited HfO2−x charge-trap layer and interfacial tunneling oxide formed by UV/ozone treatment
Journal of Alloys and Compounds·2023· 6 cited
Tunable Multilevel Gate Oxide Capacitance and Flat‐Band Voltage Shift Characteristics by Filament Formation in Double‐Floating‐Gate Metal–Oxide–Semiconductor Capacitors
Advanced Electronic Materials·2023· 1 citedOpen Access
Synthesis and Characterization of Wc-Fe Base Alloy Composite Produced by Spark Plasma Sintering
SSRN Electronic Journal·2023Open Access
Effect of a Wireless Vital Sign Monitoring System on the Rapid Response System in the General Ward
Journal of Medical Systems·2022· 12 citedOpen Access
Nonvolatile memory characteristics associated with oxygen ion exchange in thin-film transistors with indium-zinc oxide channel and HfO2-x gate oxide
Materials Today Advances·2022· 10 citedOpen Access
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Frequent Co-authors

Chi Jung Kang(24), Hyun Ho Lee(23), Yong‐Sang Kim(9), Quanli Hu(9), Ki‐Bum Kim(8), Haider Abbas(7), Yoon-Jae Baek(7), Young Jin Choi(7), Mi Ra Park(6), Hyung Jun Kim(6), Keonwon Beom(6), Woonhyuk Baek(5), Hyun-Mi Kim(4), Paul Yang(4), Tae Sung Lee(3), Yawar Abbas(3), Dong Hun Kim(3), Daehoon Park(3), Hong Zheng(3), Minju Kim(3)