G. A. Oganesyan

Physico-Technical Institute — Russia

Engineering · Physical Sciences

14h-index610citations144works0.42yr avg

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Research Topics

Silicon and Solar Cell Technologies(61), Semiconductor materials and interfaces(47), Silicon Carbide Semiconductor Technologies(27), Semiconductor materials and devices(24), Sleep and Wakefulness Research(23)

Publications144 total

Effect of Electron Irradiation on the Parameters of Gallium Nitride in a Wide Temperature Range

Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques·2025

Positron Studies of Bismuth Donor Centers in Silicon: Effect of Irradiation with 15 MeV Protons

Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena·2025Open Access

Effect of Low-Dose Irradiation and Subsequent Isochronous Annealing on the Current-Voltage Characteristics of Silicon Carbide-Based Surface-Barrier Diodes

Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques·2024

1 cited

Journal of Applied Physics·2024· 1 citedOpen Access

Relaxation of mechanical stresses in bending of silicon wafers

1 cited

Physica B Condensed Matter·2024· 1 cited

Shallow donor impurity of bismuth in silicon: Peculiar electrical properties of bismuth-related defects produced by electron irradiation

1 cited

Journal of Applied Physics·2023· 1 cited

Effect of Proton Irradiation on the Properties of High-Voltage Integrated 4H-SiC Schottky Diodes at Operating Temperatures

Semiconductors·2023

Study of Heavily Doped n-3C-SiC Epitaxial Films Grown on 6H-SiC Semi-Insulating Substrates by Sublimation Method

2 cited

Semiconductors·2023· 2 cited

Effect of proton irradiation on the properties of high-voltage integrated 4H-SiC Schottky diodes at operating temperatures

1 cited

Физика и техника полупроводников·2023· 1 citedOpen Access

Current-voltage characteristics and DLTS spectra of high voltage SiC Schottky diodes irradiated with electrons at high temperatures

1 cited

Solid-State Electronics·2022· 1 cited

Electron- and proton irradiation of strongly doped silicon of p-type: Formation and annealing of boron-related defects

5 cited

Journal of Applied Physics·2022· 5 cited

Annealing High-Voltage 4H-SiC Schottky Diodes Irradiated with Electrons at a High Temperature

2 cited

Semiconductors·2022· 2 cited

Current-Voltage Characteristics and Dlts Spectra of High Voltage Sic Schottky Diodes Irradiated with Electrons at High Temperatures

1 cited

SSRN Electronic Journal·2022· 1 citedOpen Access

Influence of the crystallographic orientation of silicon on the formation of &quot;primary&quot; cracks

Физика твердого тела·2022Open Access

“Nucleation” Cracks on the Surface of a Silicon Crystal

Physics of the Solid State·2021

Investigation of electrolysis-related modification of graphene films in biosensors

Journal of Physics Conference Series·2021Open Access

Microstructure of bismuth centers in silicon before and after irradiation with 15 MeV protons

3 cited

Journal of Physics Condensed Matter·2021· 3 cited

Towards the Modeling of Impurity-Related Defects in Irradiated n-Type Germanium: a Challenge to Theory

Semiconductors·2020

Vacancy-Phosphorus Complexes in Electron-Irradiated Floating-Zone n-Type Silicon: New Points in Annealing Studies

1 cited

Semiconductors·2020· 1 cited

Dependence of the Kinetics of Radiation-Induced Defect Formation on the Energy Absorbed by Si and SiC when Exposed to Fast Charged Particles

10 cited

Journal of Surface Investigation X-ray Synchrotron and Neutron Techniques·2019· 10 cited

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Frequent Co-authors

V. V. Emtsev(29), D. S. Poloskin(11), В. В. Козловский(9), Vitalii V. Kozlovski(8), V. V. Emtsev(8), A. А. Lebedev(6), C. A. Londos(6), N.Yu. Arutyunov(6), Mohamed Elsayed(6), R. Krause‐Rehberg(6), V. Yu. Davydov(5), N. V. Abrosimov(5), V. V. Kozlovski(4), N. B. Strokan(4), C.A.J. Ammerlaan(4), B. A. Andreev(4), С. П. Лебедев(4), A. Misiuk(3), P. L. Abramov(3), A. S. Tregubova(3)