V. T. Srikar

American Institute of Aeronautics and Astronautics — United States

Engineering · Physical Sciences

10h-index1.0kcitations18works0.02yr avg
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Research Topics

Advanced MEMS and NEMS Technologies(7), Force Microscopy Techniques and Applications(6), Copper Interconnects and Reliability(6), Semiconductor materials and devices(5), Electronic Packaging and Soldering Technologies(3)

Publications18 total

Controlled modification of micromachined silicon surfaces using colloidal micro-and nanoparticles
2004· 2 cited
Fluidic Packaging of Microengine and Microrocket Devices for High-Pressure and High-Temperature Operation
Journal of Microelectromechanical Systems·2004· 32 cited
Micro-Raman measurement of bending stresses in micromachined silicon flexures
Journal of Microelectromechanical Systems·2003· 134 cited
Structural design considerations for micromachined solid-oxide fuel cells
Journal of Power Sources·2003· 97 cited
A critical review of microscale mechanical testing methods used in the design of microelectromechanical systems
Experimental Mechanics·2003· 169 cited
A Critical Review of Microscale Mechanical Testing Methods Used in the Design of Microelectromechanical Systems
Experimental Mechanics·2003· 8 cited
Materials selection in micromechanical design: an application of the ashby approach
Journal of Microelectromechanical Systems·2003· 90 cited
Materials selection for microfabricated electrostatic actuators
Sensors and Actuators A Physical·2002· 80 cited
Thermoelastic damping in fine-grained polysilicon flexural beam resonators
Journal of Microelectromechanical Systems·2002· 137 cited
The reliability of microelectromechanical systems (MEMS) in shock environments
Journal of Microelectromechanical Systems·2002· 209 cited
Microscale Measurement of Stresses in a Silicon Flexure Using Raman Spectroscopy
MRS Proceedings·2002· 1 cited
The Design and Analysis of Shock Resistant Microsystems (MEMS)
2001· 9 cited
Mechanism maps for electromigration-induced failure of metal and alloy interconnects
Journal of Applied Physics·1999· 20 cited
Dislocation pile-ups as sites for formation of electromigration-induced transgranular slit-like voids in Al interconnects
Scripta Materialia·1999
Diffusion and electromigration of copper in SiO2-passivated single-crystal aluminum interconnects
Applied Physics Letters·1999· 21 cited
Electromigration behavior and reliability of bamboo Al(Cu) interconnects for integrated circuits
DSpace@MIT (Massachusetts Institute of Technology)·1999· 1 citedOpen Access
The effect of Al3Ti capping layers on electromigration in single-crystal aluminum interconnects
Applied Physics Letters·1998· 8 cited
Diffusion and Electromigration of Cu in Single Crystal Al Interconnects
MRS Proceedings·1998· 1 cited

Frequent Co-authors

S.M. Spearing(9), Carl V. Thompson(5), S.D. Senturia(3), Anna K. Swan(2), M. Selim Ünlü(2), Bennett B. Goldberg(2), Yoav Peles(2), Kevin T. Turner(1), Tze Yung Andrew Ie(1), T. Harrison(1), Christopher S. Protz(1), Aleš Mráček(1), Vaibhav K. Andleigh(1), Young-Joon Park(1), Leonel R. Arana(1)