Françis Calmon

Centre National de la Recherche Scientifique — France

Physics and Astronomy · Physical Sciences

12h-index522citations131works0.42yr avg
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Research Topics

Advanced Optical Sensing Technologies(35), Advancements in Semiconductor Devices and Circuit Design(31), Semiconductor materials and devices(30), 3D IC and TSV technologies(22), Advanced Fluorescence Microscopy Techniques(19)

Publications131 total

Using the Dark Count Rate of SPAD Implemented in CMOS FD-SOI Technology for True Random Number Generator
2025Open Access
Modeling of Hot-Carrier Degradation driven by silicon-hydrogen bond dissociation in SPADs
arXiv (Cornell University)·2024Open Access
Transient Measurements of Avalanche Dynamics and Quenching in SPADs
SPIRE - Sciences Po Institutional REpository·2024· 1 cited
Shallow Trench Isolation Patterning to Improve Photon Detection Probability of Single-Photon Avalanche Diodes Integrated in FD-SOI CMOS Technology
Photonics·2024Open Access
Front-Side Photon Detection improvement of SPAD integrated in FD-SOI CMOS Technology thanks to STI patterning
SPIRE - Sciences Po Institutional REpository·2024
Correlations between DCR and PDP of SPAD integrated in a 28 nm FD -SOI CMOS Technology
HAL (Le Centre pour la Communication Scientifique Directe)·2024· 1 citedOpen Access
Germanium on silicon SPAD 32x32 pixel array in 3D-stacked technology for SWIR applications
HAL (Le Centre pour la Communication Scientifique Directe)·2024· 1 citedOpen Access
Integration of an ultra-fast active quenching circuit with a monolithic 3D SPAD pixel in a 28 nm FD-SOI CMOS technology
Sensors and Actuators A Physical·2023· 4 cited
Hot-Carrier Degradation modeling of DCR drift in SPADs
2023· 1 cited
Indoor Optical Wireless Communication Coverage Optimization Using a SiPM Photoreceiver
2023Open Access
Characterization and modeling of DCR and DCR drift variability in SPADs
2023· 5 cited
NOISE THEORITICAL INVESTIGATIONS FOR TRI-DIMMENSIONAL NMR CIRCUIT: TOWARDS THE NANOSCALE
International Journal of Mathematics and Statistics·2023Open Access
Integration of an Ultra-Fast Active Quenching Circuit with a Monolithic 3d Spad Pixel in a 28 Nm Fd-Soi Cmos Technology
SSRN Electronic Journal·2023· 1 citedOpen Access
Identification of stress factors and degradation mechanisms inducing DCR drift in SPADs
2022· 2 cited
Statistical measurements and Monte-Carlo simulations of DCR in SPADs
ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC)·2022· 5 cited
Architecture optimization of SPAD integrated in 28 nm FD-SOI CMOS technology to reduce the DCR
Solid-State Electronics·2022· 12 citedOpen Access
3D Electro-optical Simulations for Improving the Photon Detection Probability of SPAD Implemented in FD-SOI CMOS Technology
2021· 5 citedOpen Access
Dark Count Rate in Single-Photon Avalanche Diodes: Characterization and Modeling study
2021· 7 cited
Dark Count Rate in Single-Photon Avalanche Diodes: Characterization and Modeling study
2021· 6 cited
Improving the Photon Detection Probability of SPAD implemented in FD-SOI CMOS Technology with light-trapping concept
2021· 3 cited
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Frequent Co-authors

Patrick Pittet(10), Dominique Golanski(10), Christian Gontrand(10), Dylan Issartel(10), Andreia Cathelin(9), R. Clerc(8), Olivier Valorge(8), R. Cellier(8), T. Chaves de Albuquerque(7), Mohamed Amine Bounouar(6), Serge Ecoffey(5), Dominique Drouin(5), Matteo Vignetti(5), M. Le Berre(4), D. Rideau(4), Jacques Verdier(4), Aurore Savoy-Navarro(4), Wilfried Uhring(4), Mathieu Sicre(4), Bastien Mamdy(4)