K. E. Kudryavtsev

Institute for Physics of Microstructures — Russia

Physics and Astronomy · Physical Sciences

16h-index808citations98works2.62yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(60), Silicon Nanostructures and Photoluminescence(29), Advanced Semiconductor Detectors and Materials(29), Photonic and Optical Devices(24), Semiconductor materials and interfaces(21)

Publications98 total

Room-temperature stimulated emission at 3.67  µm from Auger-optimized HgCdTe quantum well heterostructures
Applied Optics·2025· 1 cited
Ultrafast Luminescence Kinetics and Localization Effects of Nonequilibrium Carriers in Degenerate n-InGaN Layers
Journal of Experimental and Theoretical Physics Letters·2025Open Access
Luminescence efficiency and temperature quenching of spontaneous and stimulated emission in ultra-low dislocation density InN
Journal of Applied Physics·2025Open Access
Hot phonon effect in mid-infrared HgTe/CdHgTe quantum wells evaluated by quasi-steady-state photoluminescence
Applied Physics Letters·2024· 1 cited
Optically Pumped Stimulated Emission in HgCdTe-based Quantum Wells: Toward Continuous Wave Lasing in Very Long-wavelength Infrared Range
2024· 1 cited
Optically pumped stimulated emission in HgCdTe-based quantum wells: Toward continuous wave lasing in very long-wavelength infrared range
Applied Physics Letters·2024· 10 citedOpen Access
Features of Formation of InxGa1 – xN Bulk Layers in the Immiscibility Gap of Solid Solutions (x ~ 0.6) by Molecular Beam Epitaxy with Plasma Nitrogen Activation
Semiconductors·2024· 5 cited
Analysis of the optical gain due to free-to-bound electronic transitions in indium-rich InGaN layers
Journal of Applied Physics·2023· 1 cited
Quantifying non-threshold Auger-recombination processes in mid-wavelength infrared range HgCdTe quantum wells
Applied Physics Letters·2023· 4 cited
Mid-IR lasing in HgCdTe multiple quantum well edge-emitting ridges
Applied Optics·2023· 5 cited
Stoichiometry Optimization in InGaN Epitaxy Towards Stimulated Emission in Near Infrared with Minimum Threshold
2023
Intraband carrier relaxation in mid-infrared (3–4 <i>μ</i>m) HgCdTe based structures: Effect of the carrier heating on the operating temperatures of bulk and quantum-well lasers
Journal of Applied Physics·2023· 4 cited
Laser Generation at Wavelengths 4.1–5.1 μm of CdxHg1–xTe/CdyHg1–yTe Quantum-Well Heterostructures with Microdisk Resonators
Journal of Applied Spectroscopy·2022
LASER GENERATION OF CdxHg1–xTe/CdyHg1–yTe QUANTUM WELL HETEROSTRUCTURE WITH MICRODISK RESONATORS AT A WAVELENGTH OF 4.1—5.1 μm
Journal of Applied Spectroscopy·2022Open Access
Stimulated Emission up to 2.75 µm from HgCdTe/CdHgTe QW Structure at Room Temperature
Nanomaterials·2022· 6 citedOpen Access
PA MBE growth of intermediate-composition InGaN layers for red and near-IR laser sources
Физика и техника полупроводников·2022Open Access
Photoluminescence of strained germanium microbridges at various temperatures: experiment and modeling
Физика и техника полупроводников·2022Open Access
Plasma-Assisted Molecular Beam Epitaxy of In-Rich InGaN: Growth Optimization for Near-IR Lasing
ECS Journal of Solid State Science and Technology·2022· 3 cited
Infrared stimulated emission with an ultralow threshold from low-dislocation-density InN films grown on a vicinal GaN substrate
Fundamental Research·2021· 4 citedOpen Access
Toward Peltier-cooled mid-infrared HgCdTe lasers: Analyzing the temperature quenching of stimulated emission at ∼6 <i>μ</i>m wavelength from HgCdTe quantum wells
Journal of Applied Physics·2021· 12 citedOpen Access
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Frequent Co-authors

А. А. Дубинов(26), S. V. Morozov(23), V. V. Rumyantsev(22), V. I. Gavrilenko(21), V. Ya. Aleshkin(20), А. В. Новиков(14), M. A. Fadeev(12), А. В. Антонов(12), Н. Н. Михайлов(11), С. А. Дворецкий(10), Д. Н. Лобанов(9), V. V. Utochkin(9), Artem N. Yablonskiy(8), D. V. Shengurov(8), A. M. Kadykov(7), Z. F. Krasilnik(7), С. М. Некоркин(7), F. Teppe(7), Z. F. Krasil’nik(7), M. S. Zholudev(6)