R. Wasielewski

University of Wrocław — Poland

Engineering · Physical Sciences

11h-index318citations28works3.02yr avg
OpenAlex↗ORCID↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Semiconductor materials and devices(11), GaN-based semiconductor devices and materials(6), Silicon Carbide Semiconductor Technologies(5), Molecular Junctions and Nanostructures(5), ZnO doping and properties(4)

Publications28 total

Highly Reproducible Automated Tip Coater for In Situ and Operando EC-STM Measurements
Surfaces·2024· 1 citedOpen Access
Growth and Properties of Ultra-Thin PTCDI-C8 Films on GaN(0001)
Crystals·2024· 2 citedOpen Access
Unveiling the Interplay between a Au(100) Electrode, Adsorbed TTMAPP Porphyrin Cations, and Iodide Anions: An EC-STM and CV Study
The Journal of Physical Chemistry C·2024· 6 cited
Adsorption of Cu on Au(110): In situ EC-STM investigations
Elsevier eBooks·2022· 1 cited
Influence of Graphite Layer on Electronic Properties of MgO/6H-SiC(0001) Interface
Materials·2021· 14 citedOpen Access
HAFNIUM AND NITROGEN INTERACTION AT Hf/GaN(0001) INTERFACE
Surface Review and Letters·2020· 1 cited
Electronic system for the complex measurement of a Wilberforce pendulum
European Journal of Physics·2018· 4 cited
Physicochemical properties of the Sb/p-SiC interface
Vacuum·2017· 5 cited
Electronic Properties of Structures Containing Films of Alq<sub>3</sub> and LiBr Deposited on Si(111) Crystal
Acta Physica Polonica A·2017· 4 citedOpen Access
Ru/GaN(0001) Interface Properties
Acta Physica Polonica A·2017· 21 citedOpen Access
TiO thin films on GaN(0001)
physica status solidi (b)·2015· 9 cited
TiO2 thin films grown on SiO2–Si(111) by the reactive evaporation method
Optica Applicata·2013· 3 citedOpen Access
Formation of Cr ohmic contact on graphitized 6H-SiC(0001) surface
Optica Applicata·2013· 3 citedOpen Access
Ultrathin films of Cu on <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si6.gif" overflow="scroll"><mml:mrow><mml:mtext>Ru</mml:mtext><mml:mo stretchy="false">(</mml:mo><mml:mn>1</mml:mn><mml:mtext> </mml:mtext><mml:mn>0</mml:mn><mml:mtext> </mml:mtext><mml:mover accent="true"><mml:mn>1</mml:mn><mml:mo>¯</mml:mo></mml:mover><mml:mtext> </mml:mtext><mml:mn>0</mml:mn><mml:mo stretchy="false">)</mml:mo></mml:mrow></mml:math>: Flat bilayers and mesa islands
Applied Surface Science·2012· 6 cited
Nanostructured graded-index antireflection layer formation on GaN for enhancing light extraction from light-emitting diodes
Applied Physics B·2012· 11 cited
Nanotexturing of GaN light-emitting diode material through mask-less dry etching
Nanotechnology·2010· 14 cited
Fabrication of submicron-sized features in InP/InGaAsP/AlGaInAs quantum well heterostructures by optimized inductively coupled plasma etching with Cl2/Ar/N2 chemistry
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2010· 20 cited
Formation of Excess Silicon on 6H-SiC(0001) during Hydrogen Etching
Acta Physica Polonica A·2009· 10 citedOpen Access
Preparation of TiO&lt;inf&gt;2&lt;/inf&gt; thin films by reactive evaporation method
2009· 1 cited
Preparation technique of 6H-SiC(0001) wafers
2009
page 1 of 2Next →

Frequent Co-authors

A. Ciszewski(17), P. Mazur(14), M. Grodzicki(12), J. Domaradzki(4), Danuta Kaczmarek(4), A. Borkowska(4), B. V. Yakshinskiy(4), Damian Wojcieszak(3), Theodore E. Madey(3), K. Lament(3), Rafal Dylewicz(3), Mohamed Nejib Hedhili(3), Tomasz Kosmala(3), Eugeniusz Prociów(2), Elena Loginova(2), J. Sito(2), Rafał Lewandków(2), Ali Z. Khokhar(2), Faiz Rahman(2), M. Nowicki(2)