Akihiro Moto

Sumitomo Electric Industries (Japan) — Japan

Physics and Astronomy · Physical Sciences

15h-index550citations52works0.02yr avg
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Research Topics

Physics of Superconductivity and Magnetism(18), Semiconductor Quantum Structures and Devices(17), GaN-based semiconductor devices and materials(14), Semiconductor materials and devices(10), Magnetic properties of thin films(5)

Publications52 total

A Low Power Quad 25.78-Gbit/s 2.5 V Laser Diode Driver Using Shunt-Driving in 0.18 µm SiGe-BiCMOS
2013· 7 cited
Development of 100Gbit/s Compact WDM Transmitter Module with Optical Multiplexer
Proceedings of the Society Conference of IEICE·2013
100Gbit/s compact transmitter module integrated with optical multiplexer
2013· 16 cited
A surface plasmon resonance sensor on a compact disk‐type microfluidic device
Journal of Separation Science·2011· 24 cited
Raman Scattering Characterization of Annealed GaN_xAs_ Layers
Medical Entomology and Zoology·2009
Low dark current SWIR photodiode with InGaAs/GaAsSb Type II quantum wells grown on InP substrate
2009· 13 cited
A surface plasmon resonance sensor on a compact disk-like microfluidic device
13th International Conference on Miniaturized Systems for Chemistry and Life Sciences, MicroTAS 2009·2009
Kinetics of gallium adlayer adsorption/desorption on polar and nonpolar GaN surfaces
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·2007· 27 cited
SDH/SONET Multi-rate SFP Module with Gain Selectable Transimpedance Amplifier and Extinction Ratio Control Circuit
2007
Kinetics of gallium adsorption and desorption on (0001) gallium nitride surfaces
Applied Physics Letters·2006· 16 cited
Enhanced luminescence in GaInNAsSb quantum wells through variation of the arsenic and antimony fluxes
Applied Physics Letters·2006· 14 cited
Growth of InN on 6H‐SiC by plasma assisted molecular beam epitaxy
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2006· 3 cited
Real time spectroscopic ellipsometry investigation of homoepitaxial GaN grown by plasma assisted molecular beam epitaxy
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2006· 2 cited
Investigation of Optical Properties of Nitrogen Incorporated Sb based Quantum Well and Quantum Dots for Infrared Sensors Application
MRS Proceedings·2006
Nucleation and growth mode of the molecular beam epitaxy of GaN on 4H–SiC exploiting real time spectroscopic ellipsometry
Journal of Crystal Growth·2005· 14 cited
5×5 cm<sup>2</sup> GaAs and GaInAs Solar Cells with High Conversion Efficiency
Japanese Journal of Applied Physics·2005· 7 cited
Mechanically Stacked GaAs/GaInAsP Dual-Junction Solar Cell with High Conversion Efficiency of More than 31%
Japanese Journal of Applied Physics·2005· 3 cited
Highly reliable AlGaInAs buried heterostructure lasers for uncooled 10 Gb/s direct modulation
OFC/NFOEC Technical Digest. Optical Fiber Communication Conference, 2005.·2005· 8 cited
Comparison of GaNAsSb and GaNAs as quantum-well barriers for GaInNAsSb optoelectronic devices operating at 1.3–1.55μm
Journal of Applied Physics·2004· 44 cited
Negative dispersion-flattened fiber for full-spectrum signal transmission in metropolitan networks
Optical Fiber Communication Conference·2004· 1 cited
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Frequent Co-authors

Shigenori Takagishi(13), Tatsuo Shimizu(12), Akiharu Morimoto(10), So Tanaka(8), Toshihiro Maeda(7), Masayoshi Tonouchi(7), Tatsuya Tanabe(6), Nobuyuki Ikoma(5), Mitsuo Takahashi(5), Soojeong Choi(5), April S. Brown(5), María Losurdo(5), Giovanni Bruno(5), Toshiharu Minamikawa(5), Yasuto Yonezawa(5), Shigeru Otsubo(5), Michiko Takahashi(4), Masanori Hangyo(4), H. B. Yuen(3), James S. Harris(3)