V.W.L. Chin

University of Sydney — Australia

Physics and Astronomy · Physical Sciences

17h-index1.3kcitations52works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(23), Advanced Semiconductor Detectors and Materials(17), Semiconductor materials and interfaces(17), Semiconductor materials and devices(12), Silicon and Solar Cell Technologies(9)

Publications52 total

Modelling age-related changes in executive functions of soccer players
arXiv (Cornell University)·2021· 1 citedOpen Access
Effect estimates of COVID-19 non-pharmaceutical interventions are non-robust and highly model-dependent
Journal of Clinical Epidemiology·2021· 64 citedOpen Access
Effects of non-pharmaceutical interventions on COVID-19: A Tale of Three Models
2020· 14 citedOpen Access
A Longitudinal Analysis of the Executive Functions in High-Level Soccer Players
Journal of Sport and Exercise Psychology·2020· 47 cited
Efficient Data Augmentation for Multivariate Probit Models with Panel Data: An Application to General Practitioner Decision Making about Contraceptives
Journal of the Royal Statistical Society Series C (Applied Statistics)·2020· 3 citedOpen Access
Multiclass classification of growth curves using random change points and heterogeneous random effects
arXiv (Cornell University)·2019· 1 citedOpen Access
Multiclass classification of growth curves using random change points\n and heterogeneous random effects
arXiv (Cornell University)·2019Open Access
Transition in (001) AlGaAs/AlAs/GaAs double-barrier quantum structure for infrared photodetection
Journal of Applied Physics·1996· 4 cited
Noncontact thickness and composition assessment of a strained AlGaAs/AlAs/InGaAs double barrier multiple quantum well structure
Journal of Applied Physics·1996· 2 cited
Transport mechanism of Γ- and<i>X</i>-band electrons in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>As/AlAs/GaAs double-barrier quantum-well infrared photodetectors
Physical review. B, Condensed matter·1996· 12 cited
The effects of solvent and dopant impurities on the performance of LPE silicon solar cells
Solar Energy Materials and Solar Cells·1996· 18 cited
Hydrogenation passivation of acceptors in MOCVD grown p-INSB
Solid State Communications·1996· 3 cited
Ohmic contacts to n-type and p-type GaSb
Solid-State Electronics·1996· 19 cited
Bias and thickness dependence of the infra-red Schottky diode studied by internal photoemission
Solid-State Electronics·1996· 5 cited
MBE and MOCVD growth of AlGaAsAlAsGaAs double barrier multiple quantum well infrared detector
Materials Science and Engineering B·1995· 2 cited
Electron mobility in InO.53GaO.47As as a function of concentration and temperature
Microelectronics Journal·1995· 2 cited
Current characteristics of the double-barrier<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mn>0.25</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>0.75</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>As/<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mn>0.45</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>0.55</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>As/GaAs single-quantum-well structures
Physical review. B, Condensed matter·1995· 5 cited
Alloy-scattering dependence of electron mobility in the ternary gallium, indium, and aluminum nitrides
Journal of Applied Physics·1995· 41 cited
Hole Transport in the InSbInAs material system
Solid State Communications·1995· 19 cited
Electron mobility in GaSb
Solid-State Electronics·1995· 53 cited
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Frequent Co-authors

T.L. Tansley(24), Tanakorn Osotchan(10), Renate Egan(10), Martin A. Green(9), J. W. V. Storey(9), Mary Vaughan(4), Louise Ryan(3), Robert Kohn(3), Scott A. Sisson(3), John P. A. Ioannidis(2), Martin A. Tanner(2), Sally Cripps(2), Adam Beavan(2), Jan Mayer(2), Job Fransen(2), Ewa M. Goldys(2), Kenneth Butcher(2), Stephen M Newbery(2), Alasdair W. Clark(2), Jan Spielmann(1)