Frank Schwierz

Technische Universität Ilmenau — Germany

Engineering · Physical Sciences

35h-index10.4kcitations201works3.72yr avg
OpenAlex↗ORCID↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Advancements in Semiconductor Devices and Circuit Design(74), Semiconductor materials and devices(67), GaN-based semiconductor devices and materials(60), Graphene research and applications(40), Radio Frequency Integrated Circuit Design(38)

Publications201 total

Moore's Law at 60 - Still in Good Shape or Already Ailing?
2025
Gigahertz and terahertz transistors for 5G, 6G, and beyond mobile communication systems
Applied Physics Reviews·2024· 11 citedOpen Access
The Role of Vacancy Dynamics in Two‐Dimensional Memristive Devices (Adv. Electron. Mater. 1/2024)
Advanced Electronic Materials·2024Open Access
The Role of Vacancy Dynamics in Two‐Dimensional Memristive Devices
Advanced Electronic Materials·2023· 19 citedOpen Access
MOSFETs with Stacked 2D Nanosheet Channels – An Auspicious Option to Delay “Forever”
2023· 1 cited
The Role of Mobile Point Defects in Two-Dimensional Memristive Devices
arXiv (Cornell University)·2023· 1 citedOpen Access
Molybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation
Nature Electronics·2022· 164 cited
Lateral 2D TMDC Memristors – Experiment and Modeling
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)·2022· 6 cited
Microwave Transistors - The Backbone of 5G and Beyond Communication Systems
2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT)·2022· 2 cited
Low-Cost Strain Gauge Integration in Ceramics for Force Sensor Applications
2022
Six Decades of Research on 2D Materials: Progress, Dead Ends, and New Horizons
IEEE Journal of the Electron Devices Society·2022· 13 citedOpen Access
The contribution of gate and drain voltages to temperature distribution along the channel in 2D MoS<sub>2</sub> based MOSFET
2021 International Conference on Information Science and Communications Technologies (ICISCT)·2021· 2 cited
Electric bias-induced edge degradation of few-layer MoS2 devices
Materials Today Proceedings·2021· 2 cited
Failure Analysis of Wire Bonding on Strain Gauge Contact Pads Using FIB, SEM, and Elemental Mapping
2021· 2 citedOpen Access
Six Decades of Research on 2D Materials: Progress, Dead Ends, and New Horizons
2021· 2 cited
Simulation of self-heating effect in MOSFET based on 2D MoS2
2021
Boron nitride switches for 5G and beyond
Nature Electronics·2020· 4 cited
Insulators for 2D nanoelectronics: the gap to bridge
Nature Communications·2020· 496 citedOpen Access
Vertical current transport processes in MOS-HEMT heterostructures
Applied Surface Science·2020
Status and Future Prospects of CMOS Scaling and Moore's Law - A Personal Perspective
2020· 49 cited
page 1 of 11Next →

Frequent Co-authors

R. Granzner(16), V. M. Polyakov(13), J. Pezoldt(7), O. Ambacher(7), Juin J. Liou(5), Max C. Lemme(4), M. Kittler(4), R. Quay(4), Christian Schippel(3), Mohamed Alsharef(3), Gianluca Fiori(2), W. Pletschen(2), S. Müller(2), Zhansong Geng(2), Bernd Hähnlein(2), Wael Jatal(2), Uwe Baumann(2), Katja Tonisch(2), T. Mollenhauer(2), W. Henschel(2)