Lucian Barbut

Melexis (Germany) — Germany

Engineering · Physical Sciences

9h-index486citations20works0.52yr avg
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Research Topics

Advancements in Semiconductor Devices and Circuit Design(14), Semiconductor materials and devices(12), Silicon Carbide Semiconductor Technologies(7), Nanowire Synthesis and Applications(5), Advanced Measurement and Metrology Techniques(4)

Publications20 total

Modeling of Hall-Based Magnetoelastic Torque Sensors
2024· 1 cited
Magnetoelastic Torque Sensor with GaAs Hall Plates for E-Bikes
2024· 1 cited
Magnetoelastic Torque Sensor with GaAs Hall Plates for E-Bikes
2024Open Access
Modeling of Hall-Based Magnetoelastic Torque Sensors
2024Open Access
Modeling Asymmetric Operation in Double-Gate Junctionless FETs by Means of Symmetric Devices
IEEE Transactions on Electron Devices·2014· 34 citedOpen Access
Generalized Charge-Based Model of Double-Gate Junctionless FETs, Including Inversion
IEEE Transactions on Electron Devices·2014· 30 citedOpen Access
Mobility Measurement in Nanowires Based on Magnetic Field-Induced Current Splitting Method in H-Shape Devices
IEEE Transactions on Electron Devices·2014· 8 citedOpen Access
Trans-capacitance modeling in junctionless gate-all-around nanowire FETs
Solid-State Electronics·2014· 30 citedOpen Access
A Common Core Model for Junctionless Nanowires and Symmetric Double-Gate FETs
IEEE Transactions on Electron Devices·2013· 51 citedOpen Access
Trans-Capacitance Modeling in Junctionless Symmetric Double-Gate MOSFETs
IEEE Transactions on Electron Devices·2013· 29 citedOpen Access
Design space of twin gate junctionless vertical slit field effect transistors
Infoscience (Ecole Polytechnique Fédérale de Lausanne)·2013· 4 citedOpen Access
Heavily doped junctionless vertical slit FETs with slit width Below 20 nm
Infoscience (Ecole Polytechnique Fédérale de Lausanne)·2013· 5 citedOpen Access
Modeling and Design Space of Junctionless Symmetric DG MOSFETs With Long Channel
IEEE Transactions on Electron Devices·2013· 50 citedOpen Access
Transient Off-Current in Junctionless FETs
IEEE Transactions on Electron Devices·2013· 24 citedOpen Access
Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regime
Solid-State Electronics·2013· 142 citedOpen Access
Downscaling and Short Channel Effects in Twin Gate Junctionless Vertical Slit FETs
Infoscience (Ecole Polytechnique Fédérale de Lausanne)·2013· 3 citedOpen Access
Towards fabrication of Vertical Slit Field Effect Transistor (VeSFET) as new device for nano-scale CMOS technology
2011· 5 citedOpen Access
Towards circuit design using VeSFETs
Infoscience (Ecole Polytechnique Fédérale de Lausanne)·2011· 7 citedOpen Access
Step toward robust and reliable amorphous polymer field-effect transistors and logic functions made by the use of roll to roll compatible printing processes
Organic Electronics·2009· 62 citedOpen Access
Ethics and robotics. Study on the ethical aspects of robotics and automation
Infoscience (Ecole Polytechnique Fédérale de Lausanne)·2009Open Access

Frequent Co-authors

Jean-Michel Sallèse(13), Farzan Jazaeri(12), Didier Bouvet(6), Nicole Yazigy(4), Enrico Gasparin(4), Bruno Brajon(4), Gael F. Close(4), A. Koukab(1), J.-M. Sallese(1), Jean‐Marie Verilhac(1), M. Benwadih(1), Anne-Laure Seiler(1), S. Jacob(1), Cecile Bory(1), J. Bablet(1), Marie Heitzman(1), J. Tallal(1), Philippe Frère(1), Gilles Sicard(1), R. Gwoziecki(1)