A. Foroughi‐Abari

University of Alberta — Canada

Engineering · Physical Sciences

10h-index278citations12works0.02yr avg
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Research Topics

Semiconductor materials and devices(11), GaN-based semiconductor devices and materials(3), Advancements in Semiconductor Devices and Circuit Design(3), Electronic and Structural Properties of Oxides(3), ZnO doping and properties(2)

Publications12 total

Electrical Comparison of ${\rm HfO}_{2}$ and ${\rm ZrO}_{2}$ Gate Dielectrics on GaN
IEEE Transactions on Electron Devices·2013· 24 cited
ZrO<sub>2</sub> on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition
Applied Physics Letters·2013· 15 cited
Ultrathin-layer chromatography nanostructures modified by atomic layer deposition
Journal of Chromatography A·2013· 27 cited
Capacitance Modeling and Characterization of Planar MOSCAP Devices for Wideband-Gap Semiconductors With High-$\kappa$ Dielectrics
IEEE Transactions on Electron Devices·2012· 13 cited
Observation of resonant tunneling phenomenon in metal-insulator-insulator-insulator-metal electron tunnel devices
Applied Physics Letters·2012· 36 cited
Depth profiling of NbxO/W multilayers: effect of primary ion beam species (O2 <sup>+</sup> , Ar <sup>+</sup> and Cs <sup>+</sup> )
Surface and Interface Analysis·2012· 1 cited
GaN Metal Oxide Semiconductor Capacitor via ALD
2012
Enhanced rectifying response from metal-insulator-insulator-metal junctions
Applied Physics Letters·2011· 68 cited
Atomic Layer Deposition for Nanotechnology
Nanofabrication·2011· 19 cited
The effect of argon pressure, residual oxygen and exposure to air on the electrical and microstructural properties of sputtered chromium thin films
Thin Solid Films·2011· 17 cited
In Situ Spectroscopic Ellipsometry Study of Plasma-Enhanced ALD of Al<sub>2</sub>O<sub>3</sub>on Chromium Substrates
Journal of The Electrochemical Society·2011· 13 cited
Growth, structure and properties of sputtered niobium oxide thin films
Thin Solid Films·2010· 45 cited

Frequent Co-authors

Ken Cadien(11), Kyle M. Bothe(4), Amir Afshar(4), Douglas W. Barlage(4), P. Maraghechi(2), A. Y. Elezzabi(2), Peter A. von Hauff(2), Patrick von Hauff(2), Steven R. Jim(1), Kathleen M. Krause(1), P. Li(1), Martin Kupsta(1), M.T. Taschuk(1), Michael J. Brett(1), Can Xu(1), A. He(1), Shuchang Xu(1), D.S. Karpuzov(1)