Gregory J. Salamo

University of Arkansas at Fayetteville — United States

Physics and Astronomy · Physical Sciences

51h-index15.4kcitations706works1.82yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(360), Quantum Dots Synthesis And Properties(143), Photonic and Optical Devices(127), Semiconductor Lasers and Optical Devices(121), Advanced Fiber Laser Technologies(102)

Publications706 total

GeSn alloys with ∼21% Sn grown by effusion cell molecular beam epitaxy
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2026
Investigation of carrier dynamics by steady-state and transient photoluminescence for a quaternary InGaAsSb/GaAs multiple quantum wells heterostructure
Journal of Alloys and Compounds·2025
Study of group III-V waveguides on sapphire platform for photonic integrated circuits
2025· 1 cited
X-ray diffraction study of Ge islands on Si(001) grown by aspect ratio trapping
Journal of Applied Physics·2025Open Access
Neutralizing Optical Defects in GeSn
arXiv (Cornell University)·2025Open Access
Optical Characterization of the Interplay Between Carrier Localization and Carrier Injection in Self-Assembled GaSb/GaAs Quantum Dots
Optics·2025Open Access
Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
Applied Physics Letters·2025
Dislocation-Related Photoluminescence Emission in MBE-Grown GeSn
Crystal Growth & Design·2025· 2 cited
Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
arXiv (Cornell University)·2025Open Access
Direct Bandgap Photoluminescence of GeSn grown on Si(100) substrate by Molecular Beam Epitaxy Growth
arXiv (Cornell University)·2025Open Access
MBE growth and characterization of strained GeSn/Ge multiple quantum well structures
Journal of Physics D Applied Physics·2025· 2 cited
Optical characterization of the type-II hybrid nanostructure with the GaSb/GaAs quantum dots coupled to an InGaAs/GaAs quantum well
Optics Express·2025Open Access
Investigation of carrier localization in bulk compound and quantum well GaAsSb/GaAs heterostructures
Journal of Alloys and Compounds·2025· 3 cited
Optical spin polarization by coherent magnetoabsorption generation
Nanoscale·2025· 2 cited
Tip-induced nanoscale engineering of surface potential and conductivity in GeSn alloys
Nanoscale·2025
Study of Group III-V Waveguides on Sapphire Platform for Photonic Integrated Circuits
arXiv (Cornell University)·2024Open Access
Manipulating formation of different InGaAs/GaAs nanostructures via tailoring As4 flux
Applied Physics Letters·2024
Temperature dependent optical properties of ultrathin InAs quantum well
Journal of Luminescence·2024
Modeling Study of Si3N4 Waveguides on a Sapphire Platform for Photonic Integration Applications
Materials·2024· 6 citedOpen Access
High-Quality Single-Step Growth of GaAs on C-Plane Sapphire by Molecular Beam
Crystals·2024· 1 citedOpen Access
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Frequent Co-authors

Jiang Wu(10), Edward J. Sharp(9), Mordechai Segev(8), Yuriy I. Mazur(8), V. G. Dorogan(7), Mourad Benamara(7), Zhiming M. Wang(7), Paolo Di Porto(6), Yu. I. Mazur(6), Zh. M. Wang(6), Demetrios N. Christodoulides(5), Galen C. Duree(5), B. Crosignani(5), Vasyl P. Kunets(5), Mingchu Tang(5), Gary L. Wood(5), William W. Clark(5), Roberto Morandotti(4), Ratnakar R. Neurgaonkar(4), Shui-Qing Yu(4)