F. Andrieu

Commissariat à l'Énergie Atomique et aux Énergies Alternatives — France

Engineering · Physical Sciences

27h-index3.2kcitations224works3.62yr avg
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Research Topics

Semiconductor materials and devices(162), Advancements in Semiconductor Devices and Circuit Design(135), Integrated Circuits and Semiconductor Failure Analysis(55), Ferroelectric and Negative Capacitance Devices(54), Advanced Memory and Neural Computing(40)

Publications223 total

Threshold Changeable Memory Based on Amorphous GeSbSeN
2025
Sb/Te Ratio Engineering in Phase-Change Memory for High SET Speed and Large Memory Window
2025
Spintronic Devices for Thermodynamically Guided Analog Computing
2025
On Chip Customized Learning on Resistive Memory Technology for Secure Edge AI
2025· 1 cited
Monolithic 3-D Integration of Diverse Memories: Resistive Switching (RRAM) and Gain Cell (GC) Memory Integrated on Si CMOS
IEEE Transactions on Electron Devices·2025· 2 cited
Compact MEOL OxRAM with 14 Conductance Levels for Dense Embedded Inference Computing
2025· 1 cited
Effects of Carbon Lateral Implantation in Ge-rich GeSbTe Phase-Change Memory
IEEE Electron Device Letters·2025· 1 cited
Edge Continual Training and Inference with RRAM-Gain Cell Memory Integrated on Si CMOS
2024· 3 cited
GeN Underlayer for Segregation-Tolerant Ge-Rich GeSbTe-Based Phase-Change Memory Featuring Low Current, Low SET Drift, and High-Temperature Data Retention
IEEE Transactions on Electron Devices·2024
1S1R Multi-Level-Cell for Dense Quantized Recurrent Spiking Neural Network Inference Computing
2024· 1 cited
A synergistic fault tolerance framework for Mbit 28nm embedded RRAM
2024· 1 cited
Charge-based Sense Demonstration in 1T-1C HZO FeRAM Arrays to Overcome C<sub>BL</sub>-induced Bank Size Limitations
2024· 3 cited
Data Retention Insights from Joint Analysis on BEOL-Integrated HZO-Based Scaled FeCAPs and 16kbit 1T-1C FeRAM Arrays
2024· 3 citedOpen Access
Programming Operations Analysis and Statistics in One Selector and One Memory Ovonic Threshold Switching + Phase‐Change Memory Double‐Patterned Self‐Aligned Structure
physica status solidi (RRL) - Rapid Research Letters·2024· 3 citedOpen Access
Powering AI at the edge: A robust, memristor-based binarized neural network with near-memory computing and miniaturized solar cell
Nature Communications·2024· 35 citedOpen Access
3D sequential integration with Si CMOS stacked on 28nm industrial FDSOI with Cu-ULK iBEOL featuring RO and HDR pixel
2023· 5 cited
Dynamics of polarization loss and imprint in bilayer ferroelectric tunnel junctions
Journal of Applied Physics·2023· 6 cited
Convolution neural network inference using frequency modulation in computational phase-change memory
2023Open Access
Enhancing ReRAM MLC Stability Through Reduction of Oxygen Vacancies Mobility Using Verification Algorithm
2023
1S1R Sub-Threshold Operation in Crossbar Arrays for Neural Networks Hardware Implementation
2023Open Access
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Frequent Co-authors

O. Faynot(21), S. Deleonibus(13), O. Weber(11), C. Fenouillet-Béranger(10), T. Poiroux(10), M. Vinet(9), Jean‐Michel Hartmann(9), T. Ernst(9), G. Ghibaudo(8), M. Cassé(7), L. Tosti(6), O. Rozeau(6), Sylvain Barraud(6), C. Vizioz(6), P. Perreau(6), C. Tabone(5), F. Allain(5), L. Brévard(5), F. Bœuf(5), T. Skotnicki(5)