Xiuhuan Liu

Jilin University — China

Materials Science · Physical Sciences

8h-index209citations37works5.02yr avg
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Research Topics

Boron and Carbon Nanomaterials Research(11), Photonic and Optical Devices(10), Diamond and Carbon-based Materials Research(9), Graphene research and applications(7), Semiconductor materials and devices(7)

Publications37 total

Transfer-Free Analog and Digital Flexible Memristors Based on Boron Nitride Films
Nanomaterials·2024· 5 citedOpen Access
<i>p</i>-type hexagonal boron nitride films with bis(cyclopentadienyl) magnesium as a doping gas in halide vapor phase epitaxy
Applied Physics Letters·2023· 9 cited
The effects of post-annealing technology on crystalline quality and properties of hexagonal boron nitride films deposited on sapphire substrates
Vacuum·2022· 12 cited
Effect of employing chromium as a buffer layer on the crystallinity of hexagonal boron nitride films grown by LPCVD
Journal of Materials Science Materials in Electronics·2021· 5 cited
Effect of Employing Chromium as a Buffer Layer on the Crystallinity of Hexagonal Boron Nitride Films Grown by LPCVD
Research Square (Research Square)·2021· 1 citedOpen Access
A Novel Method for Reducing Overhead of Training Sentiment Analysis Network
2021· 1 citedOpen Access
Growth of hexagonal boron nitride films on silicon substrates by low-pressure chemical vapor deposition
Journal of Materials Science Materials in Electronics·2021· 31 cited
Synthesis of magnesium nitride films with BN as protective layers by reactive radio-frequency magnetron sputtering
Thin Solid Films·2020· 8 cited
Fault detection of few-mode fiber based on high-order mode with high fault detection sensitivity
Optics Letters·2019· 15 cited
The Franz-Keldysh effect and free carrier dispersion effect in germanium
Optik·2018· 5 cited
Raman study of color-zoning cubic boron nitride single crystals
Optik·2017· 2 cited
Stability to moisture of hexagonal boron nitride films deposited on silicon by RF magnetron sputtering
Thin Solid Films·2017· 25 cited
Pockels effect and optical rectification induced by the built-in electric field in the space charge regions of surface layers of silicon crystals
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2016· 2 cited
Electroluminescence of cubic boron nitride single crystal flakes with color-zoning
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2015· 1 cited
Photo-and-dark-current-voltage characteristics of normal-incidence GaAs photodetectors with two types of electrode configurations
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2015
Investigation on cubic boron nitride crystals doped with Si by high temperature thermal diffusion
Applied Surface Science·2014· 15 cited
Characteristics of plate-like and color-zoning cubic boron nitride crystals
Applied Surface Science·2013· 8 cited
Quadratic nonlinear response to 1.56-\mu m continuous wave laser in semi-insulating GaAs
Chinese Optics Letters·2013Open Access
Anisotropy of two-photon absorption in [110]-cut nearly-intrinsic silicon crystal
JOURNAL OF INFRARED AND MILLIMETER WAVES·2012Open Access
Measurement of the linear electro-optic tensor of cubic boron nitride single crystals
Chinese Optics Letters·2012· 2 citedOpen Access
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Frequent Co-authors

Zhanguo Chen(32), Gang Jia(21), Lixin Hou(16), Yanjun Gao(10), Ji-Hong Zhao(9), Yanjun Gao(9), Jianxun Zhao(8), Ce Ren(7), Shi Bao(7), Kun Cao(5), Xiaohang Liu(4), Shuang Feng(4), Shuang Wang(4), Kairan Luan(3), Wenbo Zhang(3), Jinbo Mu(3), Jia Gang(3), Xi Chen(2), Chunbo Tan(2), Haiyan Quan(2)