Guangxi Hu

Fudan University — China

Engineering · Physical Sciences

11h-index474citations59works4.12yr avg
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Research Topics

Advancements in Semiconductor Devices and Circuit Design(41), Semiconductor materials and devices(38), Silicon Carbide Semiconductor Technologies(16), Nanowire Synthesis and Applications(12), Quantum, superfluid, helium dynamics(8)

Publications59 total

Ultrasteep Subthreshold Slope Metal-Drain Dual-Type (p/n) Silicon Transistors: Characterization, Analysis, and Application
IEEE Transactions on Electron Devices·2025
Characterization, Understanding, and Modeling of Lorentzian Noise Phenomenon in Advanced Dynamically Depleted SOI MOSFET
IEEE Transactions on Electron Devices·2025· 1 cited
Charge Polarization-Enhanced Graphene Biosensors for the Attomole Detection of miRNA
ACS Nano·2025· 7 cited
An efficient surface-potential-based compact model for dynamically depleted silicon-on-insulator MOSFETs
Microelectronics Journal·2025· 1 cited
Comprehensive Modeling and Investigation of Intrinsic Variation Source Fluctuation in 2D-Layered Thin Film Transistors
2025· 4 cited
High drain field impact ionization transistors as ideal switches
Nature Communications·2024· 16 citedOpen Access
An Efficient Compact Model of Silicon-on-Insulatormosfets for Analog and Radio Frequency Circuit Design
SSRN Electronic Journal·2024Open Access
Full two-dimensional ambipolar CFET-like architecture for switchable logic circuits
Journal of Physics D Applied Physics·2023· 4 citedOpen Access
A Quantum Corrected Compact Model of Experimentally Fabricated GAA 2-D MBCFETs
IEEE Transactions on Electron Devices·2023· 1 cited
Knowledge-based neural network SPICE modeling for MOSFETs and its application on 2D material field-effect transistors
Science China Information Sciences·2023· 7 cited
Hand Gesture Recognition Using IR-UWB Radar with Spiking Neural Networks
2022 IEEE 4th International Conference on Artificial Intelligence Circuits and Systems (AICAS)·2022· 1 cited
The Device and Circuit Level Benchmark of Si-Based Cold Source FETs for Future Logic Technology
IEEE Transactions on Electron Devices·2022· 7 cited
Optimization of the Coupling Coefficient of the Inductive Link for Wireless Power Transfer to Biomedical Implants
International Journal of Antennas and Propagation·2022· 21 citedOpen Access
Transistor Compact Model Based on Multigradient Neural Network and Its Application in SPICE Circuit Simulations for Gate-All-Around Si Cold Source FETs
IEEE Transactions on Electron Devices·2021· 50 cited
Electric Field and Transmitting Power Analysis of Segmented and Unsegmented Loop Antennas for Transcutaneous Power Transfer
IEEE Transactions on Antennas and Propagation·2020· 2 cited
A GaSb/In<sub>0.4</sub>Ga<sub>0.6</sub>As Heterojunction Z-Shaped Tunnel Field-Effect Transistor with High Performance
2019
An analytical drain current model for graphene nanoribbon tunnel field-effect transistors
Japanese Journal of Applied Physics·2019· 1 cited
Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices
2017· 2 cited
Analytical models for GaN-based heterostructure-free normally off fin-shaped field-effect transistor
Japanese Journal of Applied Physics·2017
A threshold voltage model for GaN-based heterostructure-free normally-off FinFET
2016
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Frequent Co-authors

Lingli Wang(16), Ran Liu(14), Ran Liu(13), Ting-Ao Tang(12), Shuyan Hu(12), Ye Lü(9), Guanghui Mei(8), Li‐Rong Zheng(7), Ting-Ao Tang(7), Peicheng Li(7), Jinglun Gu(6), Peng Zhou(5), Xing Zhou(5), William E. Evenson(5), Zhihao Ding(4), Zhenhua Wu(4), Jiarui Bao(4), Xianxi Dai(4), Guodong Qi(3), Weizhuo Gan(3)