Somak Mitra

King Abdullah University of Science and Technology — Saudi Arabia

Materials Science · Physical Sciences

28h-index2.9kcitations70works0.02yr avg
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Research Topics

ZnO doping and properties(22), Ga2O3 and related materials(19), GaN-based semiconductor devices and materials(17), Silicon Nanostructures and Photoluminescence(14), Perovskite Materials and Applications(13)

Publications70 total

Novel P-type wide bandgap manganese oxide quantum dots for self-powered solar-blind deep UV devices
2023· 1 cited
Enhanced Photoresponsivity UV-C Photodetectors Using a p–n Junction Based on Ultra-Wide-Band Gap Sn-Doped β-Ga<sub>2</sub>O<sub>3</sub> Microflake/MnO Quantum Dots
ACS Applied Materials & Interfaces·2023· 24 cited
Carbon Nitride Thin Film‐Sensitized Graphene Field‐Effect Transistor: A Visible‐Blind Ultraviolet Photodetector
Advanced Materials Interfaces·2022· 13 citedOpen Access
Enhanced solar-blind deep UV photodetectors based on solution-processed p-MnO quantum dots and n-GaN p–n junction-structure
Applied Physics Letters·2022· 20 citedOpen Access
High-performance DUV-C Solar-Blind n-ZnO Quantum Dot/p-CuO Micro-pyramid Photodetector Arrays
2022 6th IEEE Electron Devices Technology &amp; Manufacturing Conference (EDTM)·2022
Enhanced-Performance Self-Powered Solar-Blind UV-C Photodetector Based on n-ZnO Quantum Dots Functionalized by p-CuO Micro-pyramids
ACS Applied Materials & Interfaces·2021· 62 cited
Giant clam inspired high-speed photo-conversion for ultraviolet optical wireless communication
Optical Materials Express·2021· 2 citedOpen Access
Highly efficient transverse-electric-dominant ultraviolet-C emitters employing GaN multiple quantum disks in AlN nanowire matrix
2021· 1 citedOpen Access
Evidence of Carrier Localization in AlGaN/GaN‐Based UV Multiple Quantum Wells with Opposite Polarity Domains Provided by Nanoscale Imaging
physica status solidi (RRL) - Rapid Research Letters·2021· 3 cited
Domain‐Size‐Dependent Residual Stress Governs the Phase‐Transition and Photoluminescence Behavior of Methylammonium Lead Iodide
Advanced Functional Materials·2021· 10 citedOpen Access
Micropump Fluidic Strategy for Fabricating Perovskite Microwire Array-Based Devices Embedded in Semiconductor Platform
Cell Reports Physical Science·2021· 17 citedOpen Access
A solid–liquid two-phase precipitation method for the growth of fullerene (C<sub>60</sub>) nanowires
CrystEngComm·2021· 1 citedOpen Access
Identifying Carrier Behavior in Ultrathin Indirect‐Bandgap CsPbX<sub>3</sub> Nanocrystal Films for Use in UV/Visible‐Blind High‐Energy Detectors
Small·2020· 74 cited
GaN and InGaN nanowires prepared by metal-assisted electroless etching: Experimental and theoretical studies
Results in Physics·2020· 13 citedOpen Access
Nanoporous GaN/<i>n-</i>type GaN: A Cathode Structure for ITO-Free Perovskite Solar Cells
ACS Energy Letters·2020· 37 cited
Quantifying the Transverse-Electric-Dominant 260 nm Emission from Molecular Beam Epitaxy-Grown GaN-Quantum-Disks Embedded in AlN Nanowires: A Comprehensive Optical and Morphological Characterization
ACS Applied Materials & Interfaces·2020· 9 cited
Enhanced UV Emission of GaN Nanowires Functionalized by Wider Band Gap Solution-Processed p-MnO Quantum Dots
ACS Applied Materials & Interfaces·2020· 41 citedOpen Access
Dark-current reduction accompanied photocurrent enhancement in p-type MnO quantum-dot decorated n-type 2D-MoS2-based photodetector
Applied Physics Letters·2020· 74 citedOpen Access
Enhanced Photoresponse of WS<sub>2</sub> Photodetectors through Interfacial Defect Engineering Using a TiO<sub>2</sub> Interlayer
ACS Applied Electronic Materials·2020· 23 cited
Titanium Carbide MXene Nucleation Layer for Epitaxial Growth of High-Quality GaN Nanowires on Amorphous Substrates
ACS Nano·2020· 24 cited
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Frequent Co-authors

Iman S. Roqan(35), Bin Xin(13), Yusin Pak(13), Davide Mariotti(13), Vladimír Švrček(12), Boon S. Ooi(10), Norah Alwadai(10), Dhaifallah R. Almalawi(8), Osman M. Bakr(7), Tien Khee Ng(7), Idris A. Ajia(7), Jung‐Wook Min(7), Naresh Alaal(6), Gun Young Jung(6), Omar F. Mohammed(5), Ram Chandra Subedi(5), Mohamed Nejib Hedhili(5), Manuel Macías‐Montero(5), Koji Matsubara(5), Bekir Türedi(4)