Tadashi Mitsunari

Physics and Astronomy · Physical Sciences

7h-index114citations18works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(13), ZnO doping and properties(5), Metal and Thin Film Mechanics(5), Ga2O3 and related materials(5), Semiconductor materials and devices(4)

Publications18 total

The next generation way of the process control of the atomic layer deposition
The Japan Society of Applied Physics·2019
Selective-area growth of vertically oriented GaN nanostructures with a hafnium pre-orienting layer
Journal of Crystal Growth·2016· 4 cited
Improved crystal quality of semipolar (10<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si0009.gif" overflow="scroll"><mml:mrow><mml:mover accent="true"><mml:mrow><mml:mn>1</mml:mn></mml:mrow><mml:mrow><mml:mo>¯</mml:mo></mml:mrow></mml:mover></mml:mrow></mml:math>3) GaN on Si(001) substrates using AlN/GaN superlattice interlayer
Journal of Crystal Growth·2016· 18 cited
Controlled morphology of regular GaN microrod arrays by selective area growth with HVPE
Journal of Crystal Growth·2016· 10 cited
Evaluation of excess In during metal organic vapor-phase epitaxy growth of InGaN by monitoring via in situ laser scattering
Japanese Journal of Applied Physics·2016· 3 cited
Selective-area growth of GaN microrods on strain-induced templates by hydride vapor phase epitaxy
Japanese Journal of Applied Physics·2016· 10 cited
Study of radiation detection properties of GaN pn diode
Japanese Journal of Applied Physics·2016· 19 cited
Beyond blue LED
Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials·2015
Single-crystalline semipolar GaN on Si(001) using a directional sputtered AlN intermediate layer
Journal of Crystal Growth·2015· 14 cited
Single-crystallite (1013)GaN on the nominal Si(001) substrate by the directional sputtered AlN intermediate layer
The Japan Society of Applied Physics·2015
GaN/SiC Epitaxial Growth for High Power and High Switching Speed Device Applications
MRS Proceedings·2015· 4 cited
Orientation improvement of the sputtered AlN on Si by the Ti pre-orientation layer
The Japan Society of Applied Physics·2014
GaN growth on narrow sputtered AlN stripes on (111) Si substrates
The Japan Society of Applied Physics·2013
AlN/air distributed Bragg reflector by GaN sublimation from microcracks of AlN
Journal of Crystal Growth·2012· 14 cited
In‐situ void formation technique using an AlN shell structure grown on GaN stripes on Si(111) and c‐plane sapphire substrates
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2012· 5 cited
The Level Scheme of 110Ag from the (n,γ) Reaction
AIP conference proceedings·1991· 1 cited
The<sup>107</sup>Ag(n, γ)<sup>108</sup>Ag reaction
Journal of Physics G Nuclear Physics·1985· 12 cited
Thermal neutron capture studies of 108 Ag and 110 Ag
Spiral (Imperial College London)·1982Open Access

Frequent Co-authors

Yoshio Honda(10), Hiroshi Amano(10), Si‐Young Bae(4), Kaddour Lekhal(4), Akira Tamura(4), Maki Kushimoto(3), Manato Deki(3), Joo‐Ho Lee(2), Tomoyuki Tanikawa(2), D. Breitig(2), H.A. Baader(2), H. Seyfarth(2), K. Schreckenbach(2), I.A. Kondurov(2), P. A. Sushkov(2), M. Bogdanović(2), Shigeyoshi Usami(2), Mutsuhito Sugiura(1), Kohei Yamashita(1), Y. Inoue(1)