P. B. Klein

United States Naval Research Laboratory — United States

Engineering · Physical Sciences

30h-index3.3kcitations134works10.72yr avg
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Research Topics

Semiconductor materials and devices(61), Silicon Carbide Semiconductor Technologies(50), GaN-based semiconductor devices and materials(23), Semiconductor materials and interfaces(20), Silicon and Solar Cell Technologies(18)

Publications134 total

Contribution for the Richard Chang Memorial Book
WORLD SCIENTIFIC eBooks·2025
Transposable element exonization generates a reservoir of evolving and functional protein isoforms
Cell·2024· 32 citedOpen Access
$Γ$-VAE: Curvature regularized variational autoencoders for uncovering emergent low dimensional geometric structure in high dimensional data
arXiv (Cornell University)·2024Open Access
Janus in the Moon: Al Reinert’s For All Mankind
Film Matters·2023
Precisely Located Si Vacancies in 4H-SiC Generated via Focused Li-ion Beam for Quantum Information Science Applications
APS March Meeting Abstracts·2019
Processing of Cavities in SiC Material for Quantum Technologies
Materials science forum·2018· 4 cited
Depth Profiling of Carrier Lifetime in Thick 4H-SiC Epilayers Using Two-Photon Absorption
Materials science forum·2018
Tracking Peer Professionalism Measures in Preclinical Medical Students
Medical Science Educator·2018· 1 cited
Carrier lifetime variation in thick 4H-SiC epilayers using two-photon absorption
Applied Physics Letters·2017· 13 cited
(Invited) Material Challenges in Low Offcut Substrates for High Power  SiC Devices
ECS Meeting Abstracts·2017
Impact of Processing on Photoluminescence Properties of 4H-SiC for Potential Qubit Applications
ECS Meeting Abstracts·2017
Complex Magnetoimpedance in Joule-Heated Co_{71,1}Fe_{3,9}Si_{10}B_{15} Microwires
Acta Physica Polonica A·2017· 1 citedOpen Access
Correlation of Lifetime Mapping of 4H-SiC Epilayers with Structural Defects Using Synchrotron X-Ray Topography
Materials science forum·2016· 2 cited
Photoinduced tunability of the reststrahlen band in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mn>4</mml:mn><mml:mi>H</mml:mi><mml:mo>−</mml:mo><mml:mi>SiC</mml:mi></mml:math>
Physical review. B./Physical review. B·2016· 46 citedOpen Access
Understanding carrier injection effects upon the Reststrahlen band of SiC using transient infrared spectroscopy (Presentation Recording)
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2015
Elimination of Basal Plane Dislocations in Epitaxial 4H-SiC via Multicycle Rapid Thermal Annealing
Materials science forum·2015· 1 cited
Transient Infrared Studies of Carrier Injection Effects on the Reststrahlen Band of SiC
Bulletin of the American Physical Society·2015
Innovative Solutions to Materials Challenges for High-Voltage SiC Power Devices
ECS Meeting Abstracts·2014
Long Carrier Lifetimes in n-Type 4H-SiC Epilayers
Materials science forum·2012· 8 cited
Single n-GaN microwire / p-Silicon thin film heterojunction light-emitting diode
Optics Express·2011· 3 citedOpen Access
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Frequent Co-authors

S.C. Binari(10), Jaime A. Freitas(10), A. E. Wickenden(6), D. D. Koleske(4), R. L. Henry(4), A T Collins(4), D. S. Katzer(3), Richard K. Chang(3), Tangali S. Sudarshan(3), D.J. Treacy(3), P. C. Taylor(3), Joshua D. Caldwell(3), T.E. Kazior(2), K. Ikossi(2), B. V. Shanabrook(2), T. A. Kennedy(2), E. R. Glaser(2), Sungeun Kim(2), S. J. Rhee(2), J. J. Coleman(2)