Sattar Al-Kabi

University of Arkansas at Fayetteville — United States

Engineering · Physical Sciences

16h-index1.3kcitations44works0.02yr avg
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Research Topics

Photonic and Optical Devices(36), Semiconductor Lasers and Optical Devices(22), Advanced Photonic Communication Systems(21), Photonic Crystals and Applications(9), Thin-Film Transistor Technologies(5)

Publications44 total

High Temperature and Power Dependent Photoluminescence Analysis on Commercial Lighting and Display LED Materials for Future Power Electronic Modules
Scientific Reports·2019· 25 citedOpen Access
Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications
ACS Photonics·2019· 230 cited
Comparison Study of High-Temperature Spontaneous Emission Quantum Efficiency of Commercial LED Materials
2019
Si-based GeSn photodetectors towards mid-infrared imaging applications
arXiv (Cornell University)·2019· 1 citedOpen Access
Study of High Performance GeSn Photodetectors with Cutoff Wavelength Up to 3.7 μm for Low-Cost Infrared Imaging
Conference on Lasers and Electro-Optics·2019· 1 cited
Study of High Performance GeSn Photodetectors with Cutoff Wavelength up to 3.7 µm for Low-Cost Infrared Imaging
Conference on Lasers and Electro-Optics·2019· 10 cited
High-Temperature Optical Characterization of Wide Band Gap Light Emitting Diodes and Photodiodes for Future Power Module Application
Advances in Science Technology and Engineering Systems Journal·2019· 1 citedOpen Access
Systematic Investigation of Spontaneous Emission Quantum Efficiency Drop up to 800 K for Future Power Electronics Applications
IEEE Journal of Emerging and Selected Topics in Power Electronics·2018· 9 cited
Optically pumped lasing at 3  μm from compositionally graded GeSn with tin up to 223%
Optics Letters·2018· 77 cited
High Temperature Photoluminsence of InGaN-Based MQWs on Patterned Sapphire Substrates
2018· 1 cited
GePb Alloy Growth Using Layer Inversion Method
Journal of Electronic Materials·2018· 17 cited
Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy Growth
Scientific Reports·2018· 145 citedOpen Access
Investigation of High Temperature Photoluminescence Efficiency from InGaN/GaN MQWs
Conference on Lasers and Electro-Optics·2018· 2 cited
Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K
ACS Photonics·2017· 190 cited
Investigation of optical transitions in a SiGeSn/GeSn/SiGeSn single quantum well structure
Journal of Applied Physics·2017· 33 cited
Study of material and optical properties of Si_xGe_1-x-ySn_y alloys for Si-based optoelectronic device applications
Optical Materials Express·2017· 10 citedOpen Access
Si-based GeSn lasers with wavelength coverage of 2 to 3 {\mu}m and operating temperatures up to 180 K
arXiv (Cornell University)·2017· 1 citedOpen Access
Si-based GeSn lasers with wavelength coverage of 2 to 3 μm and operating temperatures up to 180 K
arXiv (Cornell University)·2017Open Access
GeSn-based light sources and photoconductors towards integrated photonics for the mid-infrared
2017
Silicon-based Ge<sub>0.89</sub>Sn<sub>0.11</sub> photodetector and light emitter towards mid-infrared applications
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2017· 6 cited
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Frequent Co-authors

Shui-Qing Yu(42), Wei Du(34), Seyed Amir Ghetmiri(32), Mansour Mortazavi(30), Aboozar Mosleh(30), Wei Dou(28), Joe Margetis(27), John Tolle(27), Greg Sun(25), Richard Soref(25), Hameed A. Naseem(24), Yiyin Zhou(21), Baohua Li(20), Perry C. Grant(16), Thach Pham(15), Huong Tran(12), Murtadha Alher(9), Mourad Benamara(8), Bader Alharthi(7), Baohua Li(6)