Lunet E. Luna

Juniper Networks (United States) — United States

Engineering · Physical Sciences

15h-index1.1kcitations48works1.02yr avg
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Research Topics

Silicon Carbide Semiconductor Technologies(21), GaN-based semiconductor devices and materials(19), Semiconductor materials and devices(10), ZnO doping and properties(7), Ga2O3 and related materials(7)

Publications48 total

Demonstration of 400G Optical Interoperability in IP over WDM Network Scenarios over Single Span WDM System with and without Optical Amplifiers
2025· 1 cited
Role of Capping Material and GaN Polarity on Mg Ion Implantation Activation
physica status solidi (a)·2019· 13 cited
Polarity dependent implanted p-type dopant activation in GaN
Japanese Journal of Applied Physics·2019· 13 cited
Vertical power devices enabled by bulk GaN substrates
2019· 1 cited
Lateral GaN JFET Devices on Large Area Engineered Substrates
ECS Journal of Solid State Science and Technology·2019· 5 cited
Long range, non-destructive characterization of GaN substrates for power devices
Journal of Crystal Growth·2018· 21 cited
Lateral GaN JFET Devices on 200 mm Engineered Substrates for Power Switching Applications
2018· 6 cited
Effect of high temperature, high pressure annealing on GaN drift layers for vertical power devices
Journal of Crystal Growth·2018· 13 cited
Vertical and Lateral GaN Power Devices Enabled By Engineered GaN Substrates
ECS Meeting Abstracts·2018
(Invited) Process Development for GaN-Based Photoconductive Semiconductor Switches (PCSS)
ECS Meeting Abstracts·2018· 1 cited
(Invited) Understanding Interfaces in Homoepitaxial GaN Growth
ECS Meeting Abstracts·2018
SiC Wafer Bonding and Deep Reactive Ion Etching Towards High-Aspect Ratio SiC MEMS Fabrication
ECS Meeting Abstracts·2018· 1 cited
SiC Wafer Bonding and Deep Reactive Ion Etching Towards High-Aspect Ratio SiC MEMS Fabrication
ECS Transactions·2018· 11 cited
<i>(Invited)</i> Understanding Interfaces in Homoepitaxial GaN Growth
ECS Transactions·2018· 3 cited
Vertical and Lateral GaN Power Devices Enabled by Engineered GaN Substrates
ECS Transactions·2018· 1 cited
Influence of HVPE substrates on homoepitaxy of GaN grown by MOCVD
Journal of Crystal Growth·2018· 36 cited
Processing of Cavities in SiC Material for Quantum Technologies
Materials science forum·2018· 4 cited
A HIGH-MASS, EIGHT-FOLD SYMMETRIC SILICON CARBIDE MEMS GYROSCOPE
2018 Solid-State, Actuators, and Microsystems Workshop Technical Digest·2018· 9 citedOpen Access
Atomic-Scale Electronic Characterization of Defects in Silicon Carbide Nanowires by Electron Energy-Loss Spectroscopy
The Journal of Physical Chemistry C·2018· 6 cited
(Invited) Homoepitaxial GaN Growth on Free-Standing Substrates
ECS Meeting Abstracts·2018
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Frequent Co-authors

Travis J. Anderson(26), Karl D. Hobart(24), Marko J. Tadjer(16), Francis J. Kub(15), Andrew D. Koehler(12), Jennifer K. Hite(12), Carlo Carraro(9), Roya Maboudian(9), James C. Gallagher(8), Michael A. Mastro(8), Boris N. Feigelson(7), Fritz J. Kub(7), Alan G. Jacobs(5), Rachael L. Myers‐Ward(5), Charles R. Eddy(4), Özgür Aktaş(4), Rafael E. Luna(3), Haribabu Arthanari(3), Hiroyuki Hiraishi(3), Michelle A. Markus(3)