Hamidreza Esmaielpour

Schott (Germany) — Germany

Physics and Astronomy · Physical Sciences

12h-index441citations72works2.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(53), Advanced Semiconductor Detectors and Materials(24), Nanowire Synthesis and Applications(23), Chalcogenide Semiconductor Thin Films(18), solar cell performance optimization(13)

Publications72 total

Facet-Dependent Doping and Dopant-Dependent Faceting in Si-Doped GaAsSb Nanowires
Crystal Growth & Design·2025
Unraveling quantum size-dependent optical phenomena in hot carrier quantum well structures
Journal of Applied Physics·2025Open Access
Unraveling Quantum Size-Dependent Optoelectrical Phenomena in Hot Carrier Quantum Well Structures
ArXiv.org·2025Open Access
Coupling Quantum Confinement and Optoelectrical Probing to Unravel Hot Carrier Behavior in InGaAs Quantum Wells
2025
Understanding the influence of recombination dynamics on hot carrier populations in III-V nanowires
2025
Enhancement of hot carrier effects in core-shell InGaAs nanowires by auger heating
2025
Hot carrier dynamics in III–V semiconductor nanowires under dominant radiative and Auger recombination
Applied Physics Letters·2025· 2 citedOpen Access
Competing mechanisms of dominant radiative and Auger recombination in hot carrier generation in III-V semiconductor nanowires
arXiv (Cornell University)·2024· 1 citedOpen Access
Interplay of electron trapping by defect midgap state and quantum confinement to optimize the hot-carrier effect in a nanowire structure
Physical review. B./Physical review. B·2024· 7 citedOpen Access
Optical determination of thermoelectric transport coefficients in a hot-carrier absorber
Physical Review Applied·2024· 2 citedOpen Access
Spatial dependence of dopant incorporation and electrical transport in Si-doped GaAs(Sb) nanowires
Physical Review Materials·2024· 2 cited
Influence of Auger heating and Shockley-Read-Hall recombination on hot-carrier dynamics in InGaAs nanowires
Physical review. B./Physical review. B·2024· 9 cited
Influence of Auger heating and Shockley-Read-Hall recombination on hot carrier dynamics in InGaAs nanowires
arXiv (Cornell University)·2024Open Access
Investigation of hot carrier relaxation in type II systems via ensemble Monte Carlo simulation
2024
Tailoring hot carrier effects in semiconductor nanowires by spatial confinement
2024
Strong Dimensional and Structural Dependencies of Hot Carrier Effects in InGaAs Nanowires: Implications for Photovoltaic Solar Cells
ACS Applied Nano Materials·2024· 11 citedOpen Access
Large Tolerance of Lasing Properties to Impurity Defects in GaAs(Sb)-AlGaAs Core-Shell Nanowire Lasers
2024
Large Tolerance of Lasing Properties to Impurity Defects in GaAs(Sb)‐AlGaAs Core‐Shell Nanowire Lasers
Advanced Functional Materials·2023· 5 citedOpen Access
Hot Electron Dynamics in InAs–AlAsSb Core–Shell Nanowires
ACS Applied Energy Materials·2023· 7 cited
The role of nonequilibrium LO phonons, Pauli exclusion, and intervalley pathways on the relaxation of hot carriers in InGaAs/InGaAsP multi-quantum-wells
Scientific Reports·2023· 12 citedOpen Access
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Frequent Co-authors

Ian R. Sellers(24), Vincent R. Whiteside(21), M. B. Santos(16), Daniel Suchet(14), Jean‐François Guillemoles(13), Gregor Koblmüller(12), Jonathan J. Finley(9), Kyle R. Dorman(8), Maxime Giteau(8), Tetsuya D. Mıshıma(7), Laurent Lombez(7), Nabi Isaev(7), D. K. Ferry(6), S. Vijeyaragunathan(5), T. D. Mishima(5), Imam Makhfudz(5), Brandon K. Durant(4), Louise C. Hirst(4), Robert Walters(4), Amaury Delamarre(4)