Timothy J. Leedham

Max Planck Society — Germany

Engineering · Physical Sciences

20h-index1.0kcitations56works0.02yr avg
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Research Topics

Semiconductor materials and devices(27), Ferroelectric and Piezoelectric Materials(20), Electronic and Structural Properties of Oxides(16), Acoustic Wave Resonator Technologies(8), Catalysis and Oxidation Reactions(7)

Publications56 total

Concentric Metallic-Piezoelectric Microtube Arrays
MRS Proceedings·2008· 9 cited
PRECURSOR CHEMISTRY FOR POLAR NANOTUBES
Integrated ferroelectrics·2007
HIGH-TEMPERATURE AMORPHOUS HAFNIA (HfO<sub>2</sub>) FOR MICROELECTRONICS
Integrated ferroelectrics·2005· 5 cited
Recent Materials Characterizations of [2D] and [3D] Thin Film Ferroelectric Structures
Journal of the American Ceramic Society·2005· 71 cited
Electrical characterization of HfO2 films obtained by UV assisted injection MOCVD
Microelectronics Reliability·2005· 1 cited
Comparison of Hafnium Precursors for the MOCVD of HfO<sub>2</sub> for Gate Dielectric Applications
Integrated ferroelectrics·2003· 7 cited
Use of the ‘mist’ (liquid-source) deposition system to produce new high-dielectric devices: ferroelectric-filled photonic crystals and Hf-oxide and related buffer layers for ferroelectric-gate FETs
Microelectronic Engineering·2003· 13 cited
Nickel oxide sol–gel films from nickel diacetate for electrochromic applications
Thin Solid Films·2003· 93 cited
Metal organic chemical vapor deposition (MOCVD) of oxides and ferroelectric materials
Journal of Materials Science Materials in Electronics·2002· 25 cited
Novel Mononuclear Alkoxide Precursors for the MOCVD of ZrO<sub>2</sub> and HfO<sub>2</sub> Thin Films.
ChemInform·2002
The Unusual Thermal Stabilization of MOCVD Precursors by the Dibenzoyl Methanate Group: Liquid Injection MOCVD of Tantalum Oxide and Niobium Oxide Using M(OEt)4(dbm) Precursors
Chemical Vapor Deposition·2002· 17 cited
Atomic layer deposition of ZrO2 thin films using a new alkoxide precursor
Journal of Non-Crystalline Solids·2002· 48 cited
CCDC 171862: Experimental Crystal Structure Determination
The Cambridge Structural Database·2002Open Access
CCDC 177478: Experimental Crystal Structure Determination
The Cambridge Structural Database·2002Open Access
Atomic-Layer Deposition of ZrO<sub>2</sub> Thin Films Using New Alkoxide Precursors
MRS Proceedings·2002· 7 cited
Novel mononuclear zirconium and hafnium alkoxides; improved precursors for the MOCVD of ZrO2 and HfO2
Journal of Materials Chemistry·2001· 47 cited
ChemInform Abstract: Crystal Structure of Bi(OCMe<sub>2</sub>CH<sub>2</sub>OMe)<sub>3</sub> and Its Use in the MOCVD of Bi<sub>2</sub>O<sub>3</sub>.
ChemInform·2001
Effects of active surface nitridation on the properties of high permittivity films deposited by UV-assisted CVD
Journal de Physique IV (Proceedings)·2001· 1 cited
Crystal Structure of Bi(OCMe2CH2OMe)3 and Its Use in the MOCVD of Bi2O3
Chemical Vapor Deposition·2001· 63 cited
Synthesis and crystal structures of three new strontium β-diketonate complexes: [Sr(tmhd)2(iPrOH)4], [Sr2(tmhd)4(dmaeH)2(μ2-dmaeH)2] and [Sr4(tmod)8]
Polyhedron·2001· 19 cited
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Frequent Co-authors

Anthony C. Jones(39), Hywel O. Davies(35), Michael J. Crosbie(25), P.J. Wright(24), Paul O’Brien(19), D.J. Williams(14), J.F. Bickley(14), Paul A. Williams(13), Alexander Steiner(13), Kirsty A. Fleeting(10), P.A. Lane(8), David J. Otway(4), Gary W. Critchlow(4), Andrew J. P. White(4), Martyn E. Pemble(3), Finlay D. Morrison(3), Toshiaki Tatsuta(3), Osamu Tsuji(3), John L. Roberts(3), Paul R. Chalker(3)