E. Kuokštis

Vilnius University — LT

Physics and Astronomy · Physical Sciences

26h-index2.5kcitations95works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(80), Ga2O3 and related materials(55), ZnO doping and properties(35), Semiconductor Quantum Structures and Devices(26), Photocathodes and Microchannel Plates(16)

Publications95 total

Study of spectral and recombination characteristics of HVPE GaN grown on ammono substrates
Materials Science in Semiconductor Processing·2018· 10 cited
Study of Charge Carrier Transport in GaN Sensors
Materials·2016· 6 citedOpen Access
Temperature dependent double blueshift of photoluminescence peak position in MgZnO epitaxial layers
Journal of Applied Physics·2014· 12 cited
Band tail filling effect in MBE‐grown ternary MgZnO epitaxial layers with high Mg content
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2013· 3 cited
Radiative and nonradiative recombination rates in cubic SiC
Journal of Luminescence·2012· 9 cited
Carrier dynamics and efficiency droop in AlGaN epilayers with different Al content
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2012· 9 cited
Suppression of defect‐related luminescence in laser‐annealed InGaN epilayers
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2012· 1 cited
Suppression of Defect-Related Luminescence in Laserannealed InGaN Epilayers
publication.editionName·2012
Stimulated Emission from Wide-Gap Semiconductors
Advanced materials research·2011
Optical Characterization of MBE-Grown ZnO Epilayers
Advanced materials research·2011· 8 cited
Confocal spectroscopy of InGaN LED structures
Journal of Physics D Applied Physics·2011· 11 citedOpen Access
Influence of laser annealing on defect-related luminescence of InGaN epilayers
Journal of Luminescence·2011· 3 cited
Characterization of Optical and Photoelectrical Properties of ZnO Crystals
Acta Physica Polonica A·2011Open Access
Influence of Laser Annealing on Defect-Related Luminescence of InGaN Epilayers
publication.editionName·2011
Spatially‐resolved photoluminescence study of high indium content InGaN LED structures
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2010· 6 cited
Carrier Localization and Decay in Wide-band-gap AlGaN∕AlGaN Quantum Wells
AIP conference proceedings·2010
Synthesis of ZnO:N thin films by reactive dc magnetron sputtering
Lithuanian Journal of Physics·2010· 2 citedOpen Access
Photoluminescence studies of MBE‐grown ZnO and MgZnO epitaxial layers
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2009· 5 citedOpen Access
Photoluminescence dynamics of AlGaN quantum wells with built‐in electric fields and localized states
physica status solidi (a)·2009· 11 cited
Influence of Electric Field and Carrier Localization on Carrier Dynamics in AlGaN Quantum Wells
Acta Physica Polonica A·2008· 4 citedOpen Access
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Frequent Co-authors

M. Asif Khan(22), Jinwei Yang(21), R. Gaška(20), M. S. Shur(20), Jianping Zhang(20), G. Simin(17), V. Adivarahan(14), Jun Yang(14), M. Shatalov(13), Gintautas Tamulaitis(12), Mikhail Gaevski(9), Changqing Chen(7), Q. Fareed(7), J. Mickevičius(7), M. Asif Khan(6), Wenhong Sun(6), C. Q. Chen(6), Mee‐Yi Ryu(6), A. Chitnis(5), A. Žukauskas(5)