John Hayden

Pennsylvania State University — United States

Engineering · Physical Sciences

12h-index776citations31works9.52yr avg
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Research Topics

Acoustic Wave Resonator Technologies(22), Ferroelectric and Piezoelectric Materials(19), GaN-based semiconductor devices and materials(7), Metal and Thin Film Mechanics(7), Semiconductor materials and devices(6)

Publications31 total

Nitrogen Vacancies Induce Fatigue in Ferroelectric Al<sub>0.93</sub>B<sub>0.07</sub>N
ACS Nano·2025· 2 cited
Sputtered ferroelectric aluminum scandium boron nitride (Al1−x−yBxScyN)/<i>n</i>-GaN heterostructures
Journal of Applied Physics·2025· 1 citedOpen Access
Aluminum Boron Nitride Ferroelectric Field-Effect Transistors With ZnO Semiconductor Channel
IEEE Transactions on Electron Devices·2025
Proximity ferroelectricity in wurtzite heterostructures
Nature·2025· 25 cited
Nanoscale Ferroelectric Programming of van der Waals Heterostructures
Nano Letters·2024· 4 citedOpen Access
Boron-Doped Aluminum Nitride Ferroelectric Field-Effect Transistors with ZnO Semiconductor Channel
2024· 2 cited
Ferroelectric Al1<b>−</b>xBxN–GaN heterostructures
Applied Physics Letters·2024· 8 citedOpen Access
Perspectives and progress on wurtzite ferroelectrics: Synthesis, characterization, theory, and device applications
Applied Physics Letters·2024· 27 citedOpen Access
Effect of boron concentration on local structure and spontaneous polarization in AlBN thin films
APL Materials·2024· 7 citedOpen Access
Frequency dependence of wake-up and fatigue characteristics in ferroelectric Al0.93B0.07N thin films
Acta Materialia·2024· 19 cited
The Interplay Between Ferroelectricity and Electrochemical Reactivity on the Surface of Binary Ferroelectric Al<sub>x</sub>B<sub>1‐x</sub>N
Advanced Electronic Materials·2023· 3 citedOpen Access
Enhancement of second-order optical nonlinearities and UV second harmonic generation from periodically poled boron-substituted aluminum nitride thin films
2023
Ferroelectric Al1<b>−</b>xBxN thin films integrated on Si
Applied Physics Letters·2023· 12 citedOpen Access
Polarity effects on wake‐up behavior of Al <sub>0.94</sub> B <sub>0.06</sub> N ferroelectrics
Journal of the American Ceramic Society·2023· 17 citedOpen Access
The interplay between ferroelectricity and electrochemical reactivity on the surface of binary ferroelectric Al$_x$B$_{1-x}$N
arXiv (Cornell University)·2023Open Access
Exceptional high temperature retention in Al0.93B0.07N films
Applied Physics Letters·2023· 16 citedOpen Access
Atomic-scale polarization switching in wurtzite ferroelectrics
Science·2023· 132 citedOpen Access
Atomic-scale polarization switching in wurtzite ferroelectrics - DFT data
2023Open Access
Atomic-scale polarization switching in wurtzite ferroelectrics - dDPC data
Zenodo (CERN European Organization for Nuclear Research)·2023Open Access
Atomic-scale polarization switching in wurtzite ferroelectrics - dDPC data
Zenodo (CERN European Organization for Nuclear Research)·2023Open Access
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Frequent Co-authors

Jon‐Paul Maria(24), Susan Trolier‐McKinstry(21), Joseph Casamento(10), Ismaïla Dabo(9), Sebastián Calderón(8), Elizabeth C. Dickey(8), Wanlin Zhu(7), Steven M. Baksa(7), Kyle P. Kelley(6), William Tzou(5), Quyen Tran(5), Thomas N. Jackson(5), Pannawit Tipsawat(4), Jung In Yang(4), Fan He(4), Fan He(3), Albert Suceava(3), Venkatraman Gopalan(3), Sergei V. Kalinin(3), Yongtao Liu(3)