M. Prujszczyk

Instytut Techniczny Wojsk Lotniczych — Poland

Engineering · Physical Sciences

4h-index55citations31works0.02yr avg
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Research Topics

Silicon and Solar Cell Technologies(24), Silicon Nanostructures and Photoluminescence(15), Thin-Film Transistor Technologies(11), Semiconductor materials and interfaces(9), Ion-surface interactions and analysis(8)

Publications31 total

Pressure-assisted generation of thermal donors in doped Cz-Si
2013
Out-diffusion of hydrogen from hydrogen plasma-processed oxygen-implanted silicon
Applied Surface Science·2012· 1 cited
Properties of Si:V Annealed under Enhanced Hydrostatic Pressure
Acta Physica Polonica A·2011Open Access
Properties of Si:V annealed under enhanced hydrostatic pressure 2010-06-14 - 2010-06-17
Journal of International Crisis and Risk Communication Research·2011Open Access
MicroRaman studies of implantation‐induced amorphization of Si and subsequent regrowth under high‐pressure and high‐temperature treatment
physica status solidi (a)·2010· 1 cited
Revealing the defects in electron-irradiated Czochralski silicon
Radiation Measurements·2010
Ujawnienie historii radiacyjnej napromieniowanego elektronami krzemu otrzymanego metodą Czochralskiego poprzez po-radiacyjną obróbkę termiczną
PRZEGLĄD ELEKTROTECHNICZNY·2010· 1 cited
Defects in Czochralski-grown Si–Ge annealed under high hydrostatic pressure
Radiation Physics and Chemistry·2009· 3 cited
Thermally induced defects in silicon irradiated with fast neutrons
Radiation Physics and Chemistry·2009· 4 cited
NANOSTRUCTURE OF NITROGEN-IMPLANTED SILICON ANNEALED AT ENHANCED PRESSURE
Physics, Chemistry and Application of Nanostructures·2009· 1 cited
Buried spongy‐like layers in silicon implanted with He<sup>+</sup>, annealed and treated in D<sup>+</sup> plasma
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2009· 2 citedOpen Access
Effect of annealing under stress on defect structure of Si–Ge
Materials Science and Engineering B·2008· 6 cited
Revealing the Defects Introduced in N- or Ge-doped Cz-Si by γIrradiation and High Temperature-High Pressure Treatment
Acta Physica Polonica A·2008· 3 citedOpen Access
Defects in Si-Ge annealed under high hydrostatic pressure
Synchrotron Radiation in Natural Science·2008
Magnetic properties of silicon crystals implanted with manganese
2008· 3 cited
Dislocation-related photoluminescence from processed Si
Journal of Materials Science Materials in Electronics·2007· 3 cited
Diffusion profiles and magnetic properties of Mn-implanted silicon after thermal annealing
Journal of Materials Science Materials in Electronics·2007
Properties of Si:Cr Annealed under Enhanced Stress Conditions
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena·2007· 3 cited
Structure of Magnetically Ordered Si:Mn
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena·2007· 1 citedOpen Access
Structure of Magnetically Ordered Si:Mn
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena·2007Open Access
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Frequent Co-authors

A. Misiuk(31), J. Bąk‐Misiuk(12), J. Bąk‐Misiuk(11), K. Wieteska(10), W. Wierzchowski(9), B. Surma(8), A. Barcz(8), W. Jung(7), P. Romanowski(7), W. Graeff(6), Deren Yang(5), A. Shalimov(5), C. A. Londos(4), I. V. Antonova(4), Lee Chow(4), J. Z. Domagała(3), Richard Vanfleet(3), I. Kovačević(2), A. Wnuk(2), A. Ulyashin(2)