Guilei Wang

University of Science and Technology of China — China

Engineering · Physical Sciences

26h-index2.8kcitations269works3.82yr avg
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Research Topics

Semiconductor materials and devices(169), Advancements in Semiconductor Devices and Circuit Design(139), Nanowire Synthesis and Applications(49), Semiconductor materials and interfaces(44), Thin-Film Transistor Technologies(35)

Publications269 total

Dynamic Evolution of Hydrogen in IGZO Transistors for PBTI Improvement by Low-Temperature Atmosphere Annealing
IEEE Journal of the Electron Devices Society·2025Open Access
High-density three-dimensional integration of dynamic random-access memory using vertical dual-gate IGZO TFTs
Nature Communications·2025Open Access
Monolithic Stacked IGZO 2T0C DRAM Cells With Divisional Optimization Scheme Achieving Ultralong Retention and Stable Multibit Operation
IEEE Transactions on Electron Devices·2025
Dielectric Deposition Enhanced Crystallization in Atomic-Layer-Deposited Indium Oxide Transistors Achieving High Gated-Hall Mobility Exceeding 100 cm2/Vs at Room Temperature
arXiv (Cornell University)·2025Open Access
Improved Variability of 2T0C DRAM via Specific Post-Treatment Suppressing Variable IGZO Capacitance
IEEE Electron Device Letters·2025
Insights into S/D Contact Impacts on Asymmetric Performance of Vertical Channel-All-Around IGZO FETs
2025
Asymmetric Contact Resistances in IGZO Vertical Channel-All-Around FETs
IEEE Electron Device Letters·2025· 2 cited
High-fidelity geometric quantum gates exceeding 99.9% in germanium quantum dots
Nature Communications·2025· 4 citedOpen Access
200-period Si/Si0.8Ge0.2 superlattice structure growth and characterization for vertical stacked DRAM
Applied Physics Letters·2025· 1 cited
Poly-Si Nanosheet FETs with Vertical C-Shaped Channel Using Pulse Laser Crystallization
2025
Process and characteristics of cobalt films deposited by thermal atomic layer deposition and silicide film formed
Vacuum·2025
Effects of defects and dopants on <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-type selenium-doped amorphous tellurium oxide: Electronic structure and transistor performance from multiscale modeling
Physical Review Applied·2025· 1 cited
Design of Reliable and Modeling-Attack Resistant Strong PUFs for Lightweight Applications
2025
n-Type Metal-Oxide-Semiconductor Field-Effect Transistor Based on 100-Period Fully Strained SiGe/Si Nanostructures with Superlattice Epitaxy for Three-Dimensional Dynamic Random-Access Memory
ACS Applied Nano Materials·2025· 3 cited
Trap Behaviors and Degradation Modeling in Positive Bias Temperature Instability of Back Gated IGZO Transistors
2025
Dual-Gate 2T0C Gain Cell for Multi-Bit Input Vector-Matrix Multiplication in-Memory Computing
2025
GIDL analysis of Novel 4F<sup>2</sup> VCT architecture using TCAD simulations
2025· 1 cited
Effect of High Temperature Furnace Anneal to Element Diffusion in SIO<sub>2</sub>-SI<sub>3</sub>N<sub>4</sub> Stacks
2025
Etching Surface and Etching Dimension Control for IGZO TFT Fabrication in 3D Memory Device
2025
Study of UV Cure Effect on Peald Sinx WER in 3D Architecture
2025
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Frequent Co-authors

Henry H. Radamson(29), Junfeng Li(20), Zhenzhen Kong(19), Junjie Li(19), Huaxiang Yin(18), Jun Luo(17), Huilong Zhu(15), Tianchun Ye(14), Zhenhua Wu(13), Chao Zhao(13), Jinjuan Xiang(12), Qingzhu Zhang(12), Hong Yang(11), Jinbiao Liu(10), Hongxiao Lin(9), Yuanhao Miao(9), Xuewei Zhao(8), Tao Yang(8), Yong Du(7), Yongkui Zhang(7)