D. A. Syphers

California Institute of Technology — United States

Physics and Astronomy · Physical Sciences

10h-index317citations29works0.02yr avg
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Research Topics

Quantum and electron transport phenomena(22), Semiconductor Quantum Structures and Devices(15), Advancements in Semiconductor Devices and Circuit Design(15), Semiconductor materials and devices(8), Physics of Superconductivity and Magnetism(5)

Publications29 total

Quantum lifetime of two-dimensional holes
Solid State Communications·2007· 13 citedOpen Access
Single-hole tunneling and Coulomb blockade in the strain-relaxation-induced quantum ring
Bulletin of the American Physical Society·2006
Inhomogeneous strain relaxation in triple-barrier<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi><mml:mo>−</mml:mo><mml:mi mathvariant="normal">S</mml:mi><mml:mi mathvariant="normal">i</mml:mi><mml:mo>/</mml:mo><mml:mi mathvariant="normal">S</mml:mi><mml:mi mathvariant="normal">i</mml:mi><mml:mi mathvariant="normal">G</mml:mi><mml:mi mathvariant="normal">e</mml:mi></mml:math>nanostructures
Physical review. B, Condensed matter·1999· 6 cited
Inhomogeneous strain in individual quantum dots probed by transport measurements
Applied Physics Letters·1998· 12 citedOpen Access
Inhomogeneous strain in individual quantum dots probed by transport measurements
APS·1998
Superconducting Critical Field Properties of a Nanocomposite: Indium in Vycor Glass
APS March Meeting Abstracts·1996
In-plane valence-band nonparabolicity and anisotropy in strained Si-Ge quantum wells
Physical review. B, Condensed matter·1993· 15 cited
Similarities between the Landau spectra and dispersion relations in Si/Si1−<i>x</i>Ge<i>x</i> quantum wells investigated by magnetotunneling spectroscopy
Applied Physics Letters·1993· 5 cited
Angle-resolved magneto-tunneling spectroscopy to probe valence band anisotropy in Si/Si1−<i>x</i>Ge<i>x</i> quantum wells
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·1993· 2 citedOpen Access
Effect of strain on Si/Si1−xGex valence band structure studied by angle-resolved magnetotunneling spectroscopy
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·1992· 3 cited
Probing band structure anisotropy in quantum wells via magnetotunneling
Physical Review Letters·1991· 61 cited
Magneto-Transport Measurements on Si/Si<sub>1−x</sub>Ge<sub>x</sub> Resonant Tunneling Structures
MRS Proceedings·1991· 4 cited
Comparisons of edge state versus bulk conduction in the quantum Hall regime
Surface Science·1990· 6 cited
The high temperature behavior of the fractional quantum Hall effect
Surface Science·1990
Fractional Quantum Hall Effect with an Added Parallel Magnetic Field
Physical Review Letters·1989· 37 cited
The Fractional Quantum Hall Effect with an Added Parallel Magnetic Field
Springer series in solid-state sciences·1989
The fractional quantum hall effect in a tilted magnetic field
Solid State Communications·1988· 15 cited
Mobility enhancement of modulation-doped materials by low-temperature optical annealing of spacer-layer defect charge state
Physical review. B, Condensed matter·1987· 6 cited
Determination of transport coefficients in high mobility heterostructure systems in the presence of parallel conduction
Applied Physics Letters·1986· 33 cited
Giant induced voltages in the quantized Hall regime
Surface Science·1986· 4 cited
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Frequent Co-authors

T. P. Smith(6), U. Gennser(5), V. P. Kesan(5), P. J. Stiles(5), J. E. Furneaux(5), A. Zaslavsky(5), Subramanian S. Iyer(4), R. J. Higgins(4), Edward S. Yang(3), K. P. Martin(3), T. O. Sedgwick(3), C. D. Akyüz(3), L. B. Freund(3), P.J. Stiles(3), A. G. Swanson(2), Harley T. Johnson(2), Liang Zhao(2), Bennett B. Goldberg(2), Detlev Grützmacher(1), Shawn-Yu Lin(1)