F. Limbach

Paul Drude Institute for Solid State Electronics — Germany

Physics and Astronomy · Physical Sciences

12h-index498citations20works0.02yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

GaN-based semiconductor devices and materials(19), Nanowire Synthesis and Applications(11), ZnO doping and properties(9), Ga2O3 and related materials(7), Semiconductor Quantum Structures and Devices(3)

Publications20 total

Understanding peculiarities in the optoelectronic characteristics of light emitting diodes based on (In,Ga)N/GaN nanowires
Applied Physics Letters·2014· 19 citedOpen Access
Height self-equilibration during the growth of dense nanowire ensembles: Order emerging from disorder
Applied Physics Letters·2013· 45 cited
On the annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/Al<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>As heterostructures
Semiconductor Science and Technology·2013· 17 citedOpen Access
Indium Incorporation in In<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>N/GaN Nanowire Heterostructures Investigated by Line-of-Sight Quadrupole Mass Spectrometry
Crystal Growth & Design·2012· 15 cited
Steps towards a GaN nanowire based light emitting diode and its integration with Si-MOS technology
edoc Publication server (Humboldt University of Berlin)·2012Open Access
The influence of Mg doping on the nucleation of self-induced GaN nanowires
AIP Advances·2012· 22 citedOpen Access
Photoluminescence and Raman scattering studies of GaN nanowires obtained by top-down and bottom-up approaches
MRS Proceedings·2012· 2 cited
Influence of the adatom diffusion on selective growth of GaN nanowire regular arrays
Applied Physics Letters·2011· 66 cited
Properties of uniform diameter InN nanowires obtained under Si doping
Nanotechnology·2011· 10 cited
Cathodoluminescence spectroscopy on selectively grown GaN nanowires
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2011· 3 cited
Selective-area catalyst-free MBE growth of GaN nanowires using a patterned oxide layer
Nanotechnology·2011· 105 cited
Nitride nanowire structures for LED applications
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2011· 1 cited
Structural and optical properties of InGaN–GaN nanowire heterostructures grown by molecular beam epitaxy
Journal of Applied Physics·2011· 29 citedOpen Access
Enhanced light scattering of the forbidden longitudinal optical phonon mode studied by micro-Raman spectroscopy on single InN nanowires
Nanotechnology·2010· 20 cited
Morphology and optical properties of Mg doped GaN nanowires in dependence of growth temperature
Journal of Optoelectronics and Advanced Materials·2010· 9 cited
Highly polarized Raman scattering anisotropy in single GaN nanowires
Applied Physics Letters·2010· 39 cited
Electrical Conductivity of InN Nanowires and the Influence of the Native Indium Oxide Formed at Their Surface
Nano Letters·2009· 74 cited
Electrical conductivity in InN nanowires
Verhandlungen der Deutschen Physikalischen Gesellschaft·2009
Self‐organized growth of InN‐nanocolumns on p‐Si(111) by MBE
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2008· 22 cited
InN nanocolumns - electrical properties and site-selective growth
Verhandlungen der Deutschen Physikalischen Gesellschaft·2008

Frequent Co-authors

Tobias Gotschke(10), T. Stoïca(10), Raffaella Calarco(10), Eli Sutter(6), Lutz Geelhaar(5), Timo Schumann(4), Florian Werner(4), Christian Denker(4), J. Malindretos(4), A. Rizzi(4), O. Brandt(4), H. Riechert(4), E. O. Schäfer-Nolte(4), Detlev Grützmacher(3), R. Caterino(3), Michael Carsten(2), Peter Sutter(2), Jonas Lähnemann(2), Martin Wölz(2), Karl K. Sabelfeld(1)