Xuepeng Zhan

Qingdao University — China

Engineering · Physical Sciences

21h-index1.5kcitations160works4.22yr avg
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Research Topics

Semiconductor materials and devices(59), Advanced Memory and Neural Computing(53), Ferroelectric and Negative Capacitance Devices(50), Advanced Data Storage Technologies(32), MXene and MAX Phase Materials(17)

Publications160 total

Research on vehicle performance improvement based on nonlinear bionic suspension with inerter and its control strategies
International Journal of Non-Linear Mechanics·2025
Optoelectronic Memristors With Tunable Photoconductive Response Supporting Mixed-Precision and Anti-Disturbance Neuromorphic Computing
IEEE Transactions on Electron Devices·2025
Stacking-Engineered HfO <sub>2</sub> -ZrO <sub>2</sub> Superlattice for Low-Leakage Ferroelectric Memory: First-Principles Design to Device Demonstration
2025
An Experimental Study on Hot-Hole Injection (HHI) in Floating-Gate (FG) Flash Memory
2025
Flash-Based Computing-in-Memory (CiM) Architectures for High-Accuracy Classification
2025
Synaptic Emulated by Double-Layer ZnO Resistive RAM (ReRAM) via Optimized Sputter and Low-Temperature ALD Process
2025
Reliability Characterizations on the Hybrid Hot-Cold Data Conversion in 3D NAND Flash Memory Under Various Temperatures
2025
Experimental Study on Double-Layer ZnO Resistive RAM (ReRAM) by Co-Optimized Sputtering and Low-Temperature ALD Processes
2025
The Impacts of Different Producing Methods on the Memristive Performance in Monolayer CBRAM
2025
Co-optimization of ferroelectric gate stacks on operation voltage and memory window for next-generation NAND flash
Science China Information Sciences·2025
Temperature-dependent wakeup behavior in back-end-of-line compatible ultra-thin HfxZr1−xO2 ferroelectric film
Science China Information Sciences·2025
First-Principles Predictions of Monolayer Violet Phosphorene for Nanoscale Field-Effect Transistor Applications
ACS Applied Electronic Materials·2025· 2 cited
Effect of ALD temperature on the polarization switching dynamics of BEOL-compatible Hf0.5Zr0.5O2 ferroelectric film
Applied Physics Letters·2025· 3 cited
Comprehensive Analysis of Oxidant Effects During ALD Process of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Ferroelectric Thin Films
2025
High-Speed True Random Number Generator With Multiple Entropy Sources: Ring Oscillator Jitter and Random Telegraph Noise
IEEE Embedded Systems Letters·2025· 4 cited
Multiscale Simulation of the Impact of Defects on Elevated-Metal Metal-Oxide IGZO TFTs
Micromachines·2025· 5 citedOpen Access
High-Precision Error Bit Prediction for 3D QLC NAND Flash Memory: Observations, Analysis, and Modeling
IEEE Transactions on Computers·2025· 7 cited
Retention Accelerated Testing for 3-D QLC nand Flash Memory: Characterization, Analysis, and Modeling
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems·2025· 2 cited
Cross-Temperature FeFETs Enabling Long- and Short-Term Memory for Reservoir Computing Network
IEEE Journal of the Electron Devices Society·2025· 1 citedOpen Access
Characterization and Mechanism of Atmospheric Nanoparticle Evolution Using Surface Plasmon Resonance Dark-field Microscopy
2025
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Frequent Co-authors

Jiezhi Chen(29), Jixuan Wu(12), Pengpeng Sang(10), Lu Tai(10), Yang Feng(8), Yuan Li(7), Huailiang Xu(7), Xiaopeng Li(6), Jianjun Wu(5), Wei Wei(5), Fei Wang(5), Qianwen Wang(5), Qi‐Dai Chen(5), Hong‐Bo Sun(5), Xiaolei Wang(5), Hai Wang(4), Ruichao Guo(4), Xiaolei Ma(4), Qing Luo(4), Guoqing Zhao(4)