A. J. Shuskus

University of Hartford — United States

Engineering · Physical Sciences

13h-index616citations32works0.02yr avg
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Research Topics

Semiconductor materials and devices(6), High-Temperature Coating Behaviors(5), solar cell performance optimization(4), Metal and Thin Film Mechanics(3), Nuclear Materials and Properties(3)

Publications32 total

Method for removing semiconductor layers from salt substrates
OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)·2023Open Access
Fabrication and test of an efficient photovoltaic cell for laser optical power transmission
IEEE Photonics Technology Letters·1992· 12 cited
The Indentation Properties of Amorphous Boron Coatings Synthesized by Plasma-Enhanced CVD
MRS Proceedings·1991
Efficient high power optical delivery /photovoltaic conversion system for fiber optic links
1990· 5 cited
The use of ICP to determine delivery rates of transportable metal contaminants from metal organic liquid sources
Journal of Electronic Materials·1989· 2 cited
The Role of Sulfur in the Growth and Adhesion of Oxide Scales
1989· 5 cited
Use of ion implantation techniques to characterize the oxidation of elemental nickel
Surface and Coatings Technology·1988· 6 cited
Laser Electro-optic Phased Array Devices (LEOPARD)
1988· 3 cited
The oxidation behavior of CoCrAlY, CoCrAl and yttrium-implanted CoCrAl alloys compared and contrasted
Surface and Coatings Technology·1987· 12 cited
The oxidation behavior of some FeCrAlY, FeCrAl, and yttrium ion‐implanted FeCrAl alloys compared and contrasted
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·1986· 37 cited
The use of ion implantation techniques to study protective oxide scale adherence effects
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·1985· 16 cited
Fabrication of monocrystalline GaAs solar cells utilizing NaCl sacrificial substrates. Annual report, 1 August 1982-14 October 1983
1984· 3 citedOpen Access
Fabrication of monocrystalline GaAs solar cells utilizing NaCl sacrificial substrates
STIN·1984· 1 cited
The effect of ion-implanted silicon on the 1050°C oxidation behavior of CoCrAl and CoCrAlY compositions
Thin Solid Films·1984· 1 cited
Ion Implanted Ti-6Al-4V
MRS Proceedings·1983· 14 cited
R.f. sputtered epitaxial ZnO films on sapphire for integrated optics
Thin Solid Films·1976· 79 cited
Sputtered thin film research. Semiannual technical report No. 5, 15 April 1972--30 September 1974
OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)·1974
Sputtered thin film research
1974
Temperature determination of thin sapphire substrates
Journal of Vacuum Science and Technology·1974· 2 cited
rf-sputtered aluminum nitride films on sapphire
Applied Physics Letters·1974· 120 cited
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Frequent Co-authors

E. L. Paradis(7), J. G. Smeggil(6), J. M. Berak(5), David Quinn(3), Donald E. Cullen(3), M. E. Cowher(3), Charles G. Young(2), O. R. Gilliam(2), P. W. Levy(2), N. S. Bornstein(2), Melvin P. Shaw(2), T.M. Reeder(1), Douglas Wilson Wylie(1), W. C. Oliver(1), R. Hutchings(1), J. B. Pethica(1), Francis X. D'Amato(1), C. T. Burilla(1), R.J. Cipolli(1), M. A. DeCrescente(1)