G. D. Via

United States Air Force Research Laboratory — United States

Physics and Astronomy · Physical Sciences

25h-index1.9kcitations79works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(58), Semiconductor materials and devices(36), Silicon Carbide Semiconductor Technologies(25), Ga2O3 and related materials(17), Radio Frequency Integrated Circuit Design(11)

Publications79 total

Two-Photon Optical Beam Induced Current for Circuit Level Verification and Validation of a 130 nm Microelectronic Device
2021· 1 cited
Preparation, Imaging, and Design Extraction of the Front-End-of-Line and Middle-of-Line in a 14 nm Node FinFET Device
2021· 8 cited
A Sample Preparation Workflow for Delayering a 45 nm Node Serial Peripheral Interface Module
EDFA Technical Articles·2021
Preparation, Imaging, and Design Extraction of the Front-End-of-Line and Middle-of-Line in a 14 nm Node FinFET Device
2021Open Access
Preparation, Imaging, and Design Extraction of the Front-End-of-Line and Middle-of-Line in a 14 nm Node FinFET Device
2021Open Access
Applied Failure Analysis Tools and Techniques Toward Integrated Circuit Trust and Assurance
EDFA Technical Articles·2021· 4 cited
Sample Mounting Methods for Precision Delayering of 130 nm Integrated Circuit Devices
2020· 7 cited
From Silicon to Simulation: A Full Decomposition of a Fabricated 130 nm Serial Peripheral Interface for Establishing an Assurance Baseline Root-of-Trust
2020· 14 cited
IC Decomposition and Imaging Metrics to Optimize Design File Recovery for Verification and Validation
Proceedings - International Symposium for Testing and Failure Analysis·2020· 6 cited
A Decomposition Workflow for Integrated Circuit Verification and Validation
Journal of Hardware and Systems Security·2020· 49 cited
重イオン放射線への曝露後の商用既製algan/GaN HEMT素子の信頼性研究【Powered by NICT】
Microelectronics Reliability·2017
Guest Editorial Special Section on the 2016 International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH)
IEEE Transactions on Semiconductor Manufacturing·2016
Commercial-off-the-shelf algan/gan hemt device reliability study after exposure to heavy ion radiation
Microelectronics Reliability·2016· 14 cited
Prospects for Gallium Nitride-on-Diamond Transistors
2016· 5 cited
Benefits of Considering More than Temperature Acceleration for GaN HEMT Life Testing
Electronics·2016· 11 citedOpen Access
GaN-on-Diamond HEMTs with 11W/mm Output Power at 10GHz
MRS Advances·2016· 34 cited
Evidence for causality between GaN RF HEMT degradation and the EC-0.57 eV trap in GaN
Microelectronics Reliability·2015· 12 cited
Low-Temperature Bonded GaN-on-Diamond HEMTs With 11 W/mm Output Power at 10 GHz
IEEE Transactions on Electron Devices·2015· 97 cited
High-Performance GaN-on-Diamond HEMTs Fabricated by Low-Temperature Device Transfer Process
2015· 17 cited
Implementation of High-Power-Density <inline-formula> <tex-math notation="LaTeX">$X$ </tex-math></inline-formula>-Band AlGaN/GaN High Electron Mobility Transistors in a Millimeter-Wave Monolithic Microwave Integrated Circuit Process
IEEE Electron Device Letters·2015· 64 citedOpen Access
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Frequent Co-authors

J. Gillespie(29), Antonio Crespo(21), Gregg H. Jessen(18), Robert Fitch(18), Kelson D. Chabak(12), Dennis E. Walker(11), F. Ren(11), S. J. Pearton(11), Manuel Trejo(10), F. Ren(10), Brian Poling(9), R. Dettmer(8), T. Jenkins(8), Eric R. Heller(7), J. D. Blevins(7), J. Sewell(7), Mauricio Kossler(7), B. Luo(6), C. R. Abernathy(6), Adam Kimura(5)