Ruizhe Qian

Zhejiang Energy Research Institute — China

Engineering · Physical Sciences

11h-index553citations37works1.02yr avg
OpenAlex↗ORCID↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

Semiconductor materials and devices(22), Thin-Film Transistor Technologies(22), Silicon Nanostructures and Photoluminescence(17), Silicon and Solar Cell Technologies(16), Ion-surface interactions and analysis(10)

Publications37 total

Unraveling the synergistic mechanism in co-hydrothermal carbonization of sludge and Firmiana simplex bark via hydrochar component fractionation
Journal of environmental chemical engineering·2025
Estimating soil organic carbon sequestration potential in the Chinese Mollisols region
Agronomy Journal·2024· 2 citedOpen Access
In situ P-doped Si and Si1−xGex epitaxial films grown by remote plasma enhanced chemical vapor deposition
Journal of Electronic Materials·1995· 5 cited
Hydrogen Plasma Cleaning of the Si(100) Surface: Removal of Oxygen and Carbon and the Etching of Si
MRS Proceedings·1993· 3 cited
HF/Alcohol Preparation of Wafers for the Reduction of Haze in Low Temperature Si Epitaxy by Remote Plasma Chemical Vapor Deposition
MRS Proceedings·1993· 2 cited
Control of deposition rate in remote plasma enhanced chemical vapor deposition of Ge<i>x</i>Si1−<i>x</i>/Si heteroepitaxial films
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·1993· 1 cited
Room-temperature measurements of strong electroabsorption effect in Ge<i>x</i>Si1−<i>x</i>/Si multiple quantum wells grown by remote plasma-enhanced chemical vapor deposition
Applied Physics Letters·1993· 10 cited
Si atomic layer epitaxy based on Si2H6 and remote He plasma bombardment
Thin Solid Films·1993· 15 cited
Transmission electron microscopy study of chemically etched porous Si
Applied Physics Letters·1993· 35 cited
Hydrogen desorption on various H-terminated Si(100) surfaces due to electron beam irradiation: Experiments and modeling
Applied Physics Letters·1992· 12 cited
Growth of Ge<i>x</i>Si1−<i>x</i>/Si heteroepitaxial films by remote plasma chemical vapor deposition
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·1992· 2 cited
Si Atomic Layer Epitaxy Using Remote Plasma Assisted Hydrogen Desorption and Disilane as a Precursor
Defense Technical Information Center (DTIC)·1992
A Simple Controller for Repetitive Cycles in Atomic Layer Epitaxy
Defense Technical Information Center (DTIC)·1992
In situ B-doped Si epitaxial films grown at 450‡ C by remote plasma-enhanced chemical vapor deposition: Physical and electrical characterization
Journal of Electronic Materials·1992· 7 cited
Correlation between silicon hydride species and the photoluminescence intensity of porous silicon
Applied Physics Letters·1992· 257 cited
Structural analysis of Ge x Si1−x /Si layers by remote plasma-enhanced chemical vapor deposition on Si (100)
Journal of Electronic Materials·1992· 2 cited
The Dependence of Defect Density in Ge<sub>x</sub>Si<sub>1−x</sub>/Si Heterostructures Grown by Remote Plasma-Enhanced Chemical Vapor Deposition on Deposition Parameters
MRS Proceedings·1992
Characterization of In Situ P-Type and N-Type Doped Si and Ge<sub>X</sub>Si<sub>1−X</sub> Films Grown by Low Temperature Remote Plasma Chemical Vapor Deposition
MRS Proceedings·1992
REMOTE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (RPCVD) PROCESS FOR LOW TEMPERATURE (≤450<sup>°</sup>C) EPITAXY OF Si AND Si<sub>1−x</sub>, Ge<sub>x</sub>
Materials and Manufacturing Processes·1992
Remote Plasma Cleaning and Ion-Induced Hydrogen Desorption from the Silicon (100) Surface and Its Applications to Si Epitaxy
MRS Proceedings·1992
page 1 of 2Next →

Frequent Co-authors

A.F. Tasch(33), D. Kinosky(25), Tsan‐sheng Hsu(22), Sanjay K. Banerjee(21), J. Irby(19), B. Anthony(19), A. Mahajan(18), C. W. Magee(14), Samuel Thomas(12), L. Breaux(7), H.L. Marcus(4), J. Fretwell(4), Pablo Munguia(4), S. Lin(3), S. Banerjee(3), Sunil Thomas(3), Joe C. Campbell(2), S. Banerjee(2), Charlotte L. Grove(2), Shayak Banerjee(2)