S. Brown

IBM (United States) — United States

Physics and Astronomy · Physical Sciences

26h-index3.9kcitations81works11.52yr avg
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Research Topics

Magnetic properties of thin films(38), Advanced Memory and Neural Computing(19), Ferroelectric and Negative Capacitance Devices(19), Semiconductor materials and devices(16), Magnetic Properties and Applications(13)

Publications81 total

Measurement of CoFeB configurational ordering in magnetic random-access memory stacks using extended x-ray absorption fine structure spectroscopy
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2025
Second Harmonic-Based Approach to Identify a GIC Flow in Power Transformers
IEEE Transactions on Industry Applications·2024· 6 cited
First Demonstration of High Retention Energy Barriers and 2 ns Switching, Using Magnetic Ordered-Alloy-Based STT MRAM Devices
2024· 2 cited
Harmonic Distortions in 3ϕ Auto-Transformers Due to Geomagnetically Induced Currents
2024· 22 cited
Second Harmonic-Based Approach to Identify a GIC Flow in Power Transformers
2024· 19 cited
Impacts of Loading Level on Harmonic Distortion in 3ϕ Auto-Transformers During GIC Flows
2024· 20 cited
Effects of Loading Levels on Harmonic Distortion in Power Transformers Due to GIC Flows
2023· 22 cited
Double spin-torque magnetic tunnel junction devices for last-level cache applications
2022 International Electron Devices Meeting (IEDM)·2022· 32 cited
Reliable Sub-Nanosecond Switching in Magnetic Tunnel Junctions for MRAM Applications
IEEE Transactions on Electron Devices·2022· 23 cited
STT-MRAM - Status and Outlook
2022· 10 cited
Abstract 543: Characterization of extravascular extracellular space of rat brain tumors using wavelet-based radiomics analysis of dynamic contrast enhanced MRI
Cancer Research·2022
Reliable Sub-nanosecond MRAM with Double Spin-torque Magnetic Tunnel Junctions
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)·2022· 13 cited
2X reduction of STT-MRAM switching current using double spin-torque magnetic tunnel junction
2021 IEEE International Electron Devices Meeting (IEDM)·2021· 31 cited
Demonstration of narrow switching distributions in STTMRAM arrays for LLC applications at 1x nm node
2020· 8 cited
Spin-transfer torque MRAM with reliable 2 ns writing for last level cache applications
2019· 48 cited
Reliable Five-Nanosecond Writing of Spin-Transfer Torque Magnetic Random-Access Memory
IEEE Magnetics Letters·2019· 20 cited
Key parameters affecting STT-MRAM switching efficiency and improved device performance of 400°C-compatible p-MTJs
2017· 19 cited
Low-current Spin Transfer Torque MRAM
2017· 6 cited
Low-current Spin Transfer Torque MRAM
2017· 9 cited
High-Q magnetic inductors for high efficiency on-chip power conversion
2016· 33 cited
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Frequent Co-authors

P. L. Trouilloud(29), D. C. Worledge(28), G. Hu(24), J. Z. Sun(23), E. J. O’Sullivan(22), J. Nowak(21), R. P. Robertazzi(17), David W. Abraham(14), M. C. Gaidis(13), G. Lauer(10), Vijay Narayanan(9), M. Gottwald(9), Pouya Hashemi(9), W. J. Gallagher(7), M. Copel(7), E. Galligan(7), J. Bruley(6), C. Kothandaraman(6), W. J. Gallagher(5), J. Harms(5)