F. Murphy‐Armando

University College Cork — Ireland

Engineering · Physical Sciences

15h-index594citations57works1.52yr avg
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Research Topics

Semiconductor materials and devices(18), Nanowire Synthesis and Applications(16), Advancements in Semiconductor Devices and Circuit Design(15), Photonic and Optical Devices(14), Semiconductor materials and interfaces(12)

Publications57 total

Gate-induced electron transfer effects in monolithic Al–Ge–Al nanostructures
Applied Physics Letters·2025Open Access
First-Principles Calculation of Spin-Relaxation Due to Alloy and Electron-Phonon Scattering in Strained GeSn
arXiv (Cornell University)·2025Open Access
Ultrafast dynamics of hot carriers: Theoretical approaches based on real-time propagation of carrier distributions
The Journal of Chemical Physics·2025· 5 citedOpen Access
First-principles calculation of alloy scattering and <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mi>n</mml:mi></mml:math>-type mobility in strained <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:mrow><mml:mi>Ge</mml:mi><mml:mstyle displaystyle="false" scriptlevel="0"><mml:mtext>−</mml:mtext></mml:mstyle><mml:mi>Sn</mml:mi></mml:mrow></mml:math>
Physical Review Applied·2025· 4 citedOpen Access
Room-Temperature Light Emission from Ion-Implanted Sige/Si and Ge/Si Quantum Dots on Si(001)
ECS Meeting Abstracts·2024
First-Principles Calculation of Alloy Scattering and n-type Mobility in Strained GeSn
arXiv (Cornell University)·2024Open Access
Strain‐Induced Effects on Band‐to‐Band Tunneling and Trap‐Assisted Tunneling in Si Examined by Experiment and Theory
physica status solidi (RRL) - Rapid Research Letters·2024Open Access
Epitaxial Group-IV Quantum Dots as Room-Temperature Light Emitters
ECS Meeting Abstracts·2024
Efficient In Situ Doping of Strained Germanium Tin Epilayers at Unusually Low Temperature
Advanced Electronic Materials·2024· 4 citedOpen Access
Light emission from ion-implanted SiGe quantum dots grown on Si substrates
Materials Science in Semiconductor Processing·2024· 4 citedOpen Access
Light Emission from Ion-Implanted Sige Quantum Dots Grown on Si Substrates
SSRN Electronic Journal·2024Open Access
Quantum spin Hall phase in GeSn heterostructures on silicon
Physical Review Research·2023· 8 citedOpen Access
Electronic heat generation in semiconductors: Non-equilibrium excitation and evolution of zone-edge phonons via electron–phonon scattering in photo-excited germanium
Applied Physics Letters·2023· 8 citedOpen Access
Multivalley Electron Conduction at the Indirect-Direct Crossover Point in Highly Tensile-Strained Germanium
Physical Review Applied·2022· 15 citedOpen Access
Quantum spin Hall phase in GeSn heterostructures on silicon
arXiv (Cornell University)·2022Open Access
Design, Theoretical, and Experimental Investigation of Tensile-Strained Germanium Quantum-Well Laser Structure
ACS Applied Electronic Materials·2021· 26 citedOpen Access
Light emission from direct band gap germanium containing split-interstitial defects
Physical review. B./Physical review. B·2021· 19 citedOpen Access
Enhancement of the electronic thermoelectric properties of bulk strained silicon-germanium alloys using the scattering relaxation times from first-principles calculations
Journal of Applied Physics·2019· 14 citedOpen Access
Evolution of non-thermal phonon and electron populations in photo-excited germanium on picosecond timescales
arXiv (Cornell University)·2019· 4 citedOpen Access
Ultrafast Relaxation of Symmetry-Breaking Photo-Induced Atomic Forces
Physical Review Letters·2019· 20 citedOpen Access
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Frequent Co-authors

Stephen Fahy(22), Tomasz J. Ochalski(7), Michael Clavel(7), Mantu K. Hudait(7), Dzianis Saladukha(6), Ivana Savić(6), Moritz Brehm(5), Thomas Fromherz(4), Lukas Spindlberger(4), Johannes Aberl(4), Kevin Sewell(4), Ray Duffy(3), Éamonn Murray(3), M. P. Vaughan(3), Patrick S. Goley(2), Robert J. Bodnar(2), Siân A. Joyce(2), Alessandro De Martino(2), K. Hallberg(2), Mariano Trigo(2)