Joseph Spencer

United States Naval Research Laboratory — United States

Materials Science · Physical Sciences

14h-index1.3kcitations50works3.42yr avg
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Research Topics

Ga2O3 and related materials(32), ZnO doping and properties(22), GaN-based semiconductor devices and materials(13), Semiconductor materials and devices(9), Electronic and Structural Properties of Oxides(7)

Publications50 total

Si-doped β-(AlxGa1−x)2O3 MESFETs grown via CIS-MOCVD on (010) β-Ga2O3
APL Electronic Devices·2026Open Access
(<i>Invited</i>) Effects of Wet Etch Treatments on Breakdown Performance of β-Ga<sub>2</sub>O<sub>3</sub> Schottky Diodes and NiO-β-Ga<sub>2</sub>O<sub>3</sub> PN Diodes
ECS Meeting Abstracts·2025
Wet etch clean-up of plasma damage for 1.68 kV breakdown in NiO/β-Ga2O3 chlorine-etched PN diodes
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films·2025· 6 cited
Plasma-etch-free <i>β</i>-Ga2O3–NiO–PtO<i>x</i> merged PiN Schottky diode with high-voltage stress reliability
APL Electronic Devices·2025· 1 citedOpen Access
Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices (Adv. Electron. Mater. 1/2025)
Advanced Electronic Materials·2025Open Access
Electrothermal enhancement of β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors via back-end-of-line sputter-deposited AlN layer
Journal of Applied Physics·2024· 3 citedOpen Access
10 kV, 250°C Operational, Enhancement-Mode Ga<sub>2</sub>O<sub>3</sub> JFET with Charge-Balance and Hybrid-Drain Designs
2024· 9 cited
(Electronics and Photonics Division Poster Award Winner) Operation up to 225°C of NiO/ β-(Al0.21Ga0.79)2O3 /Ga2O3 Heterojunction Lateral Rectifiers
ECS Meeting Abstracts·2024
Nanocrystalline Diamond Lateral Overgrowth for High Thermal Conductivity Contact to Unseeded Diamond Surface
ECS Meeting Abstracts·2024
Suppression of Enhanced Magnesium Diffusion During High‐Pressure Annealing of Implanted GaN
physica status solidi (a)·2024· 2 cited
Nanocrystalline Diamond Lateral Overgrowth for High Thermal Conductivity Contact to Unseeded Diamond Surface
ECS Transactions·2024
Operation up to 225°C of NiO/ β-(Al0.21Ga0.79)2O3 /Ga2O3 Heterojunction Lateral Rectifiers
ECS Transactions·2024
Silicon Ion Implant Activation in β-(Al0.2Ga0.8)2O3
Journal of Electronic Materials·2024· 2 cited
Reduced temperature in lateral (Al<i>x</i>Ga1−<i>x</i>)2O3/Ga2O3 heterojunction field effect transistor capped with nanocrystalline diamond
Applied Physics Letters·2024· 13 citedOpen Access
The challenge to understand the zoo of particle transport regimes during resonant wave-particle interactions for given survey-mode wave spectra
Frontiers in Astronomy and Space Sciences·2024· 12 citedOpen Access
PtOx Schottky Contacts on Degenerately Doped $$\left( {\overline{2}01} \right)$$ β-Ga2O3 Substrates
Journal of Electronic Materials·2024· 4 cited
Assessment of channel temperature in β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors using visible wavelength thermoreflectance thermal imaging
Applied Physics Letters·2024· 5 cited
2 kV, 0.7 mΩ•cm<sup>2</sup> Vertical Ga<sub>2</sub>O<sub>3</sub> Superjunction Schottky Rectifier with Dynamic Robustness
2023· 18 citedOpen Access
Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentration for Multidimensional Power Devices
Advanced Electronic Materials·2023· 30 citedOpen Access
1 kV Self-Aligned Vertical GaN Superjunction Diode
IEEE Electron Device Letters·2023· 16 citedOpen Access
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Frequent Co-authors

Marko J. Tadjer(34), Alan G. Jacobs(26), Yuhao Zhang(22), Karl D. Hobart(22), Travis J. Anderson(16), Hannah N. Masten(16), James Spencer Lundh(15), Yuan Qin(13), Kohei Sasaki(12), Boyan Wang(10), Ming Xiao(10), Matthew Porter(8), Akito Kuramata(8), Fikadu Alema(8), A. Osinsky(8), Zhonghao Du(7), F. Ren(7), S. J. Pearton(7), Hsiao-Hsuan Wan(6), Jian-Sian Li(6)